參數(shù)資料
型號(hào)： TIC225D
廠商： Power Innovations International, Inc.
英文描述： SILICON TRIACS
中文描述： 硅雙向可控硅
文件頁數(shù)： 2/6頁
文件大?。?/td> 150K
代理商： TIC225D
TIC225 SERIES
SILICON TRIACS
2
JULY 1975 - REVISED MARCH 1997
P R O D U C T I N F O R M A T I O N
All voltages are with respect to Main Terminal 1.
NOTES: 6. This parameter must be measured using pulse techniques, t
p
=
≤
1 ms, duty cycle
≤
2 %. Voltage-sensing contacts separate from
the current carrying contacts are located within 3.2 mm from the device body.
7. The triacs are triggered by a 15-V (open-circuit amplitude) pulse supplied by a generator with the following characteristics:
R
G
= 100
, t
p(g)
= 20
μ
s, t
r
=
≤
15 ns, f = 1 kHz
V
TM
Peak on-state voltage
I
TM
= ±12 A
V
supply
= +12 V
V
supply
= -12 V
V
supply
= +12 V
V
supply
= -12 V
I
G
= 50 mA
I
G
= 0
I
G
= 0
(see Note 6)
Init’ I
TM
= 100 mA
Init’ I
TM
= -100 mA
±1.6
3
-4.7
±2.1
20
-20
30
-30
V
I
H
Holding current
mA
I
L
Latching current
(see Note 7)
mA
dv/dt
Critical rate of rise of
off-state voltage
Critical rise of
commutation voltage
V
DRM
= Rated V
DRM
I
G
= 0
T
C
= 110°C
±50
V/μs
dv/dt
(c)
V
DRM
= Rated V
DRM
I
TRM
= ±12 A
T
C
= 70°C
±1
±1.5
±4.5
V/μs
thermal characteristics
PARAMETER
MIN
TYP
MAX
2.5
62.5
UNIT
°C/W
°C/W
R
θ
JC
R
θ
JA
Junction to case thermal resistance
Junction to free air thermal resistance
electrical characteristics at 25°C case temperature (unless otherwise noted) (continued)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
TYPICAL CHARACTERISTICS
Figure 1.
Figure 2.
GATE TRIGGER CURRENT
vs
T
C
- Case Temperature - °C
-60
-40
-20
0
20
40
60
80
100
120
I
G
0·1
1
10
100
1000
TC07AA
CASE TEMPERATURE
V
supply
I
GTM
+ +
+ -
- -
- +
V
AA
= ± 12 V
R
L
= 10
t
p(g)
= 20 μs
GATE TRIGGER VOLTAGE
vs
T
C
- Case Temperature - °C
-60
-40
-20
0
20
40
60
80
100
120
V
G
0·1
1
10
TC07AB
CASE TEMPERATURE
- -
- +
+ +
+ -
}
V
supply
I
GTM
V
AA
= ± 12 V
R
L
= 10
t
p(g)
= 20 μs
相關(guān)PDF資料
PDF描述
TIC225M SILICON TRIACS
TIC225N SILICON TRIACS
TIC225S SILICON TRIACS
TIC226 SILICON TRIACS
TIC226D SILICON TRIACS
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TIC225D-S 功能描述:雙向可控硅 400V 8A TRIAC RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB
TIC225E 制造商:COMSET 制造商全稱:Comset Semiconductor 功能描述:SILICON BIDIRECTIONAL TRIODE THYRISTOR
TIC225M 制造商:Bourns Inc 功能描述:TRIAC 600V 8A
TIC225M 制造商:Bourns Inc 功能描述:TRIAC 8A 600V TO-220
TIC225M-S 功能描述:雙向可控硅 600V 8A TRIAC RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB
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