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參數(shù)資料
| 型號(hào)： | TIC108S |
| 廠商： | Power Innovations International, Inc. |
| 英文描述： | SILICON CONTROLLED RECTIFIERS |
| 中文描述： | 矽控整流器 |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 162K |
| 代理商： | TIC108S |
3
APRIL 1971 - REVISED MARCH 1997
TIC108 SERIES
SILICON CONTROLLED RECTIFIERS
P R O D U C T I N F O R M A T I O N
PARAMETER MEASUREMENT INFORMATION
Figure 1. Gate-controlled turn-on time
Figure 2. Circuit-commutated turn-off time
G
R
G
V
A
30 V
I
T
V
G
I
G
DUT
6
V
A
V
G
10%
90%
t
gt
PMC1AA
G1
R
G
V
A
30 V
I
A
6
V
G1
I
G
DUT
G2
R
G
V
G2
TH1
R2
R1
0.1
μ
F
to 0.5
μ
F
G2 t
P
Synchronisation
I
G
V
(I
RM
Monitor)
0.1
NOTES: A. Resistor R1 is adjusted for the specified value
of I
.
B. Resistor R2 value is 30/I
, where I
is the
holding current value of thyristor TH1.
C. Thyristor TH1 is the same device type as the
DUT.
D. Pulse Generators, G1 and G2, are
synchronised to produce an on-state anode
current waveform with the following
characteristics:
t
= 50 μs to 300 μs
duty cycle = 1%
E. Pulse Generators, G1 and G2, have output
pulse amplitude, V
G
, of
≥
20 V and duration of
10 μs to 20 μs.
V
G1
V
G2
I
A
V
A
I
T
I
RM
t
q
V
T
0
0
t
P
PMC1AB
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