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參數(shù)資料
| 型號(hào)： | TIC108S |
| 廠商： | Power Innovations International, Inc. |
| 英文描述： | SILICON CONTROLLED RECTIFIERS |
| 中文描述： | 矽控整流器 |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 162K |
| 代理商： | TIC108S |
TIC108 SERIES
SILICON CONTROLLED RECTIFIERS
2
APRIL 1971 - REVISED MARCH 1997
P R O D U C T I N F O R M A T I O N
NOTE
6: This parameter must be measured using pulse techniques, t
p
= 300 μs, duty cycle
≤
2 %. Voltage sensing-contacts, separate from
the current carrying contacts, are located within 3.2 mm from the device body.
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
I
DRM
Repetitive peak
off-state current
Repetitive peak
reverse current
Gate trigger current
V
D
= rated V
DRM
R
GK
= 1 k
T
C
= 110°C
400
μ
A
I
RRM
V
R
= rated V
RRM
I
G
= 0
T
C
= 110°C
1
mA
I
GT
V
AA
= 6 V
V
AA
= 6 V
t
p(g)
≥
20 μs
V
AA
= 6 V
t
p(g)
≥
20 μs
V
AA
= 6 V
t
p(g)
≥
20 μs
V
AA
= 6 V
Initiating I
T
= 20 mA
V
AA
= 6 V
Initiating I
T
= 20 mA
R
L
= 100
R
L
= 100
R
GK
= 1 k
R
L
= 100
R
GK
= 1 k
R
L
= 100
R
GK
= 1 k
R
GK
= 1 k
t
p(g)
≥
20
μ
s
T
C
= - 40°C
0.2
1
mA
V
GT
Gate trigger voltage
1.2
V
0.4
0.6
1
T
C
= 110°C
0.2
I
H
Holding current
T
C
= - 40°C
15
mA
R
GK
= 1 k
10
V
TM
Peak on-state
voltage
Critical rate of rise of
off-state voltage
I
TM
= 5 A
(see Note 6)
1.7
V
dv/dt
V
D
= rated V
D
R
GK
= 1 k
T
C
= 110°C
80
V/μs
thermal characteristics
PARAMETER
MIN
TYP
MAX
UNIT
R
θ
JC
R
θ
JA
Junction to case thermal resistance
Junction to free air thermal resistance
3.5
62.5
°C/W
°C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
t
gt
Gate-controlled
turn-on time
Circuit-commutated
turn-off time
I
T
= 5 A
I
G
= 10 mA
See Figure 1
2.9
μs
t
q
I
T
= 5 A
I
RM
= 8 A
See Figure 2
13.3
μs
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