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| 型號： | THAT120 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | Quad Low-Noise PNP Transistor Array |
| 中文描述： | 四低噪聲PNP晶體管陣列 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 43K |
| 代理商： | THAT120 |
Rev. 11/27/00
THAT Corporation; 45 Sumner St., Milford, Massachusetts; 01757-1656; USA
Tel: +1 (508) 478-9200; Fax: +1 (508) 478-0990; Web: www.thatcorp.com
SPECIFICATIONS
1
Maximum Ratings (T
A
= 25 C)
Parameter
Symbol
Conditions
Min
Typ
Max
Units
Collector-Emitter Voltage
BV
CEO
I
C
= 1 mAdc, I
B
= 0
-25
-40
V
Collector-Base Voltage
BV
CBO
I
C
= 10 Adc, I
E
= 0
-25
40
V
Emitter-Base Voltage
BV
EBO
I
E
= 10 Adc, I
C
= 0
-5
V
Collector-Collector Voltage
BV
CC
100
±200
V
Emitter-Emitter Voltage
BV
EE
100
±200
V
Collector Current
I
C
-10
-20
mA
Emitter Current
I
E
-10
-20
mA
Operating Temperature Range
T
A
0
70
C
Maximum Junction Temperature
T
JMAX
150
°C
Storage Temperature
T
STORE
-45
125
°C
Electrical Characteristics
2
Parameter
Symbol
Conditions
Min
Typ
Max
Units
Current Gain
h
fe
V
CB
= 10 V
I
C
= 1 mA
50
75
I
C
= 10 A
50
75
Current Gain Matching
h
fe
V
CB
= 10 V, I
C
= 1 mA
—
5
—
%
Noise Voltage Density
e
N
V
CB
= 10 V, I
C
= 1 mA, 1 kHz
—
0.75
—
nV /
Hz
Gain-Bandwidth Product
f
t
I
C
= 1 mA, V
CB
= 10 V
325
MHz
V
BE
(V
BE1
-V
BE2
; V
BE3
-V
BE4
)
V
OS
I
C
= 1 mA
—
0.5
3
mV
I
C
= 10 A
—
0.5
3
mV
I
B
(I
B1
-I
B2
; I
B3
-I
B4
)
I
OS
I
C
= 1 mA
—
700
1800
nA
I
C
= 10 A
—
7
18
nA
Collector-Base Leakage Current
I
CBO
V
CB
= 25 V
—
-25
—
pA
Bulk Resistance
r
BE
V
CB
= 0 V, 10 A < I
C
< 10mA
—
2
—
Base Spreading Resistance
r
bb
V
CB
= 10 V, I
C
= 1mA
—
25
—
Collector Saturation Voltage
V
CE(SAT)
I
C
= 1 mA, I
B
= 100 A
—
-0.05
V
Output Capacitance
C
OB
V
CB
= 10 V, I
E
= 0 mA, 100 kHz
3
pF
Collector-Collector Capacitance
Q
1
/Q
2
; Q
3
/Q
4
C
CC
V
CC
= 0 V, 100 kHz
0.6
pF
1. All specifications subject to change without notice.
2. Unless otherwise noted, T
A
=25°C.
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