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參數(shù)資料
| 型號(hào)： | TH50VSF2581AASB |
| 廠商： | Toshiba Corporation |
| 元件分類(lèi)： | 圓形連接器 |
| 英文描述： | Circular Connector; MIL SPEC:MIL-C-5015; Body Material:Metal; Series:GT; No. of Contacts:7; Connector Shell Size:18; Connecting Termination:Solder; Circular Shell Style:Square Flange Receptacle; Body Style:Straight |
| 中文描述： | SRAM和閃存混合多芯片封裝 |
| 文件頁(yè)數(shù)： | 18/50頁(yè) |
| 文件大小： | 546K |
| 代理商： | TH50VSF2581AASB |
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TH50VSF2580/2581AASB
2001-10-26 18/50
COMMAND WRITE/PROGRAM/ERASE CYCLE
SYMBOL
PARAMETER
MIN
MAX
UNIT
t
CMD
Command Write Cycle Time
120
ns
t
AS
Address Set-up Time
/
BYTE Set-up Time
0
ns
t
AH
Address Hold Time
/
BYTE Hold Time
50
ns
t
AHW
Address Hold Time from
WE
High level
20
ns
t
DS
Data Set-up Time
50
ns
t
DH
Data Hold Time
0
ns
t
WELH
WE Low-Level Hold Time
( WE Control)
50
ns
t
WEHH
WE High-Level Hold Time
( WE Control)
20
ns
t
CES
CEF
Set-up Time to WE Active ( WE Control)
0
ns
t
CEH
CEF
Hold Time from WE High Level
( WE Control)
0
ns
t
CELH
CEF
Low-Level Hold Time
(
CEF
Control)
50
ns
t
CEHH
CEF
High-Level Hold Time
(
CEF
Control)
20
ns
t
WES
WE Set-up time to
CEF
Active (
CEF
Control)
0
ns
t
WEH
WE Hold Time from
CEF
High Level
(
CEF
Control)
0
ns
t
OES
OE
Set-up Time
0
ns
t
OEHP
OE
Hold Time (Toggle, Data Polling)
90
ns
t
OEHT
OE
High-Level Hold Time (Toggle)
20
ns
t
AST
Address Set-up Time (Toggle)
0
ns
t
AHT
Address Hold Time (toggle)
0
ns
t
BEH
Erase Hold Time
50
μ
s
t
VCS
V
CCf
Set-up Time
500
μ
s
t
BUSY
Program/Erase Valid to
BY
/
RY
Delay
90
ns
t
RP
RESET
Low-Level Hold Time
500
ns
t
READY
RESET
Low-Level to Read Mode
20
μ
s
t
RB
BY
/
RY
Recovery Time
0
ns
t
RH
RESET
Recovery Time
50
ns
t
CEBTS
CEF
Set-up time BYTE Transition
5
ns
t
SUSP
Program Suspend Command to Suspend Mode
1.5
μ
s
t
RESP
Program Resume Command to Program Mode
1
μ
s
t
SUSE
Erase Suspend Command to Suspend Mode
15
μ
s
t
RESE
Erase Resume Command to Erase Mode
1
μ
s
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| TH50VSF3582AASB | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS |
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