參數(shù)資料
型號： TGF2022-24
廠商： TRIQUINT SEMICONDUCTOR INC
元件分類： 衰減器
英文描述： DC - 20 GHz Discrete power pHEMT
中文描述： 0 MHz - 20000 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
封裝： 0.57 X 1.30 MM, 0.10 MM HEIGHT, ROHS COMPLIANT, CHIP-8
文件頁數(shù)： 3/8頁
文件大?。?/td> 145K
代理商： TGF2022-24
Advance Product Information
September 19, 2005
TGF2022-24
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
3
TABLE III
RF CHARACTERIZATION TABLE
1/
(T
A
= 25
°
C, Nominal)
SYMBOL
PARAMETER
f = 10 GHz
f = 18 GHz
UNITS
Vd = 10V
Idq = 180 mA
Vd = 12V
Idq = 180 mA
Vd = 10V
Idq = 180 mA
Vd = 12V
Idq = 180 mA
Power Tuned:
Psat
PAE
Gain
Rp 2/
Cp 2/
Γ
L
3/, 4/
Saturated Output Power
Power Added Efficiency
Power Gain
Parallel Resistance
Parallel Capacitance
Load Reflection
coefficient
34.9
52.4
12.9
11.17
1.103
0.757
∠
167.4
35.6
51.9
12.9
14.25
1.029
0.738
∠
163.5
34.1
41.5
8.3
10.88
0.922
0.828
∠
167.6
34.7
37.0
8.0
12.11
0.962
0.839
∠
166.6
dBm
%
dB
pF
-
Efficiency
Tuned:
Psat
PAE
Gain
Rp 2/
Cp 2/
Γ
L
3/, 4/
Saturated Output Power
Power Added Efficiency
Power Gain
Parallel Resistance
Parallel Capacitance
Load Reflection
coefficient
Output TOI
35.3
58.3
13
18.12
1.007
0.737
∠
159.2
35.3
56.0
13
18.56
1.020
0.741
∠
158.8
33.5
46.0
8.5
12.82
1.100
0.867
∠
166.8
34.1
42.5
8.3
16.75
1.118
0.887
∠
165.2
dBm
%
dB
pF
-
OIP3
43
42
43
42
dBm
TABLE IV
THERMAL INFORMATION
Parameter
Test Conditions
T
CH
(
o
C)
T
JC
(
q
C/W)
T
M
(HRS)
θ
JC
Thermal Resistance
(channel to backside of carrier)
Vd = 12 V
Idq = 180 mA
Pdiss = 2.16 W
145
34.5
1.6 E+6
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo
Carrier at 70
°
C baseplate temperature.
1/ Values in this table are from measurements taken from a 0.6mm unit pHEMT cell at 10 and 18 GHz
2/ Large signal equivalent pHEMT output network
3/ Optimum load impedance for maximum power or maximum PAE at 10 and 18 GHz
4 The reflection coefficients for this device have been calculated from the scaled large signal Rp & Cp.
The series resistance and inductance (Rd and Ld) shown in the Figure on page 4 is excluded
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