參數(shù)資料
型號: TE28F020-150
廠商: INTEL CORP
元件分類: DRAM
英文描述: 28F020 2048K (256K X 8) CMOS FLASH MEMORY
中文描述: 256K X 8 FLASH 12V PROM, 150 ns, PDSO32
封裝: 0.310 X 0.720 INCH, TSOP-32
文件頁數(shù): 28/38頁
文件大?。?/td> 878K
代理商: TE28F020-150
28F020
E
28
4.8
AC Characteristics
—Read Only Operations—Commercial and Extended
Temperature Products
Versions
28F020-90
(4)
28F020-120
(4)
28F020-150
(4)
Symbol
Characteristics
Notes
Min
Max
Min
Max
Min
Max
Unit
t
AVAV
/t
RC
Read Cycle Time
90
120
150
ns
t
ELQV
/
t
CE
>
Chip Enable Access
Time
90
120
150
ns
t
AVQV
/
t
ACC
Address Access
Time
90
120
150
ns
t
GLQV
/
t
OE
Output Enable
Access Time
35
50
50
ns
t
ELQ
X
/
t
LZ
Chip Enable to
Output in Low Z
2, 3
0
0
0
ns
t
EHQZ
Chip Disable to
Output in High Z
2
45
55
55
ns
t
GLQX
/
t
OLZ
Output Enable to
Output in Low Z
2, 3
0
0
0
ns
t
GHQZ
/
t
DF
Output Disable to
Output in High Z
2
30
30
30
ns
t
OH
Output Hold from
Address, CE#, or
OE# Change
1, 2
0
0
0
ns
t
WHGL
Write Recovery Time
before Read
6
6
6
μs
NOTES:
1.
2.
3.
4.
Whichever occurs first.
Sampled, not 100% tested.
Guaranteed by design.
See High Speed AC Testing Input/Output Waveform(Figure 8) and High Speed AC Testing Load Circuit(Figure 9) for
testing characteristics.
See Testing Input/Output Waveform(Figure 6) and AC Testing Load Circuit(Figure 7) for testing characteristics.
5.
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TE28F032B3BA110 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
TE28F032B3BA90 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY