參數(shù)資料
型號: TE28F020-150
廠商: INTEL CORP
元件分類: DRAM
英文描述: 28F020 2048K (256K X 8) CMOS FLASH MEMORY
中文描述: 256K X 8 FLASH 12V PROM, 150 ns, PDSO32
封裝: 0.310 X 0.720 INCH, TSOP-32
文件頁數(shù): 26/38頁
文件大?。?/td> 878K
代理商: TE28F020-150
28F020
E
26
4.7
DC Characteristics
—CMOS Compatible—Extended Temperature Products
(Continued)
Limits
Symbol
Parameter
Notes
Min
Typ
(3)
Max
Unit
Test Conditions
I
ID
A
Intelligent
Identifier Current
1, 2
90
500
μA
A
9
= V
ID
V
PPL
V
PP
during Read-
Only Operations
0.00
6.5
V
NOTE:
Erase/Programs
are Inhibited
when V
PP
= V
PPL
V
PPH
V
PP
during
Read/Write
Operations
11.40
12.60
V
V
LKO
V
CC
Erase/Write
Lock Voltage
2.5
V
NOTES:
1.
All currents are in RMS unless otherwise noted. Typical values at V
CC
= 5.0 V, V
PP
= 12.0 V, T = 25 °C. These currents are
valid for all product versions (packages and speeds).
Not 100% tested: Characterization data available.
“Typicals” are not guaranteed, but based on a limited number of samples from production lots.
2.
3.
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