參數(shù)資料
型號(hào): TDA8580J
廠商: NXP Semiconductors N.V.
英文描述: Multi-purpose power amplifier
中文描述: 多用途功率放大器
文件頁(yè)數(shù): 17/28頁(yè)
文件大小: 181K
代理商: TDA8580J
2000 Apr 18
17
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580J
For BTL application at V
p
= 24 V, R
L
= 8
and P
o
at
THD = 0.5% (see Fig.15), the Average Listening
Level (ALL) for music power without distortion yields:
Table 2
P
d
as a function of headroom (music signals) for
P
o
= 2
×
23 W (THD = 0.5%).
So for the average music listening level a total power
dissipation of 16 W can be used for calculating the
optimum heat sink thermal resistance.
Heatsink calculation
The measured thermal resistance of this package R
th(j-c)
is
a maximum of 1.5 K/W. For a maximum ambient
temperature of 60
o
C the required heatsink thermal
resistance can be calculated as shown in the following
example.
EXAMPLE
Measured or given values:
V
p
= 24 V
R
L
= 8
(2 ×
BTL)
Measured worst case P
d
(sine wave) = 32 W
T
j(max)
= 150
o
C
T
amb(max)
= 60
o
C
R
th(j-c)
= 1.5 K/W
Table 3
Heatsink thermal resistance as a function of
headroom for P
o
= 2
×
23 W (THD = 0.5%).
HEADROOM
P
d
0 dB
12 dB
32 W
16 W
P
o ALL
)
15.85
1.45 W.
=
=
HEAD ROOM
P
d
R
th(hs)
1.3 K/W
4.12 K/W
0 dB
12 dB
32 W
16 W
R
th hs
)
T
----------------------P
T
d
(
)
R
th j
c
(
)
150
60
32
1.5
1.3 K/W
=
=
=
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