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參數(shù)資料
| 型號： | TDA8580J |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | Multi-purpose power amplifier |
| 中文描述： | 多用途功率放大器 |
| 文件頁數(shù)： | 13/28頁 |
| 文件大?。?/td> | 181K |
| 代理商： | TDA8580J |
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2000 Apr 18
13
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580J
handbook, halfpage
Pd
(W)
0
4
8
16
30
10
0
20
MGS711
12
Po (W)
f
i
= 1 kHz; R
L
= 4
; V
P
= 24 V; 4 channel driven.
Fig.17 Power dissipation as a function of output
power; SE mode.
handbook, halfpage
Po
(W)
8
12
16
20
30
10
0
20
MGS712
VP (V)
(1)
(2)
Fig.18 Output power as a function of supply
voltage; BTL mode.
f
i
= 1 kHz; R
L
= 4
; 2 channel driven.
(1) THD = 10%.
(2) THD = 0.5%.
handbook, halfpage
Po
(W)
8
12
16
24
30
10
0
20
MGS713
20
VP (V)
(1)
(2)
Fig.19 Output power as a function of supply
voltage; BTL mode.
f
i
= 1 kHz; R
L
= 8
; 2 channel driven.
(1) THD = 10%.
(2) THD = 0.5%
handbook, halfpage
Po
(W)
8
12
16
24
12
4
0
8
MGS714
20
VP (V)
(1)
(2)
Fig.20 Output power as a function of supply
voltage; SE mode.
f
i
= 1 kHz; R
L
= 4
; 2 channel driven.
(1) THD = 0.5%.
(2) THD = 10%
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