參數(shù)資料
型號: TDA8512J
廠商: NXP SEMICONDUCTORS
元件分類: 音頻/視頻放大
英文描述: 26 W BTL and 2 x 13 W SE or 4 x 13 W SE power amplifier
中文描述: 13 W, 4 CHANNEL, AUDIO AMPLIFIER, PZFM17
封裝: PLASTIC, DIL-BENT-SIL, 17 PIN
文件頁數(shù): 8/24頁
文件大?。?/td> 165K
代理商: TDA8512J
2001 Nov 16
8
Philips Semiconductors
Preliminary specification
26 W BTL and 2
×
13 W SE or
4
×
13 W SE power amplifier
TDA8512J
11 THERMAL CHARACTERISTICS
In accordance with IEC 60747-1.
The measured thermal resistance of the IC-package (R
th(j-c)
) is maximum 1.3 K/W if all four channels are driven. For a
maximum ambient temperature of 60
°
C and V
P
= 15 V, the following calculation for the heatsink can be made:
For the application two SE outputs with 2
load, the measured worst-case sine-wave dissipation is 2
×
7 W
For the application BTL output with 4
load, the worst-case sine-wave dissipation is 12.5 W.
So the total power dissipation is P
d(tot)
= 2
×
7 + 12.5 W = 26.5 W.
At T
j(max)
= 150
°
C the temperature increase, caused by the power dissipation, is:
T = 150
°
C
60
°
C = 90
°
C.
So P
d(tot)
×
R
th(tot)
=
T = 90 K. As a result:
which means:
R
th(hs)
= R
th(tot)
R
th(j-c)
= 3.4
1.3 = 2.1 K/W.
The above calculation is for application at worst-case (stereo) sine-wave output signals. In practice, music signals will be
applied. In that case the maximum power dissipation will be about the half the sine-wave power dissipation, which allows
the use of a smaller heatsink.
So P
d(tot)
×
R
th(tot)
=
T = 90 K. As a result:
which means:
R
th(hs)
= R
th(tot)
R
th(j-c)
= 6.8
1.3 = 5.5 K/W.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th(j-a)
R
th(j-c)
thermal resistance from junction to ambient
thermal resistance from junction to case
in free air
see Fig.5
40.0
1.3
K/W
K/W
R
th tot
)
26.5
3.4 K/W
=
=
R
th tot
)
13.25
----90
6.8 K/W
=
=
handbook, halfpage
3.0 K/W
0.7 K/W
3.0 K/W
virtual junction
output 1
output 2
case
3.0 K/W
0.7 K/W
3.0 K/W
output 3
output 4
MEA860 - 2
0.2 K/W
Fig.5 Equivalent thermal resistance network.
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