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參數(shù)資料
| 型號(hào)： | TDA1020 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 音頻／視頻放大 |
| 英文描述： | 12 W car radio power amplifier |
| 中文描述： | 12 W, 1 CHANNEL, AUDIO AMPLIFIER, PSFM9 |
| 封裝： | POWER, PLASTIC, SOT-110-1, SIP-9 |
| 文件頁數(shù)： | 6/9頁 |
| 文件大小： | 69K |
| 代理商： | TDA1020 |
November 1982
6
Preliminary Specification
Philips Semiconductors
Product specification
12 W car radio power amplifier
TDA1020
Notes
1.
2.
3.
4.
5.
6.
Measured with an ideal coupling capacitor to the speaker load.
Measured with a load resistor of 40 k
.
Measured according to IEC curve-A.
Maximum ripple amplitude is 2 V; input is short-circuited.
Total current when disconnecting pin 5 or short-circuited to ground (pin 9).
The tab must be electrically floating or connected to the substrate (pin 9).
Input impedance
preamplifier
|Z
i
|
typ.
40 k
28 to 52 k
40 k
28 to 52 k
power amplifier
|Z
i
|
typ.
Output impedance
preamplifier
|Z
o
|
typ.
2,0 k
1,4 to 2,6 k
power amplifier
Output voltage (r.m.s. value) at d
tot
= 1%
|Z
o
|
typ.
50 m
preamplifier (note 2)
V
o(rms)
>
typ.
1 V
1,5 V
Frequency response
Noise output voltage (r.m.s. value; note 3)
B
50 Hz to 25 kHz
R
S
= 0
V
n(rms)
typ.
<
typ.
<
0,3 mV
0,5 mV
0,5 mV
1,0 mV
R
S
= 8,2 k
V
n(rms)
Ripple rejection (note 4)
at f = 100 Hz; C2 = 1
μ
F
RR
typ.
>
typ.
44 dB
48 dB
54 dB
at f = 1 kHz to 10 kHz
RR
Bootstrap current at onset of clipping (pin 4)
R
L
= 4
and 2
Stand-by current (note 5)
Crystal temperature for
3 dB gain
I
4
I
sb
T
c
typ.
<
>
40 mA
1 mA
150
°
C
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