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參數(shù)資料
| 型號： | TDA1020 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 音頻／視頻放大 |
| 英文描述： | 12 W car radio power amplifier |
| 中文描述： | 12 W, 1 CHANNEL, AUDIO AMPLIFIER, PSFM9 |
| 封裝： | POWER, PLASTIC, SOT-110-1, SIP-9 |
| 文件頁數(shù)： | 5/9頁 |
| 文件大?。?/td> | 69K |
| 代理商： | TDA1020 |
November 1982
5
Preliminary Specification
Philips Semiconductors
Product specification
12 W car radio power amplifier
TDA1020
HEATSINK DESIGN EXAMPLE
The derating of 8 K/W of the encapsulation requires the following external heatsink (for sine-wave drive):
10 W in 2
at V
P
=
14,4 V
maximum sine-wave dissipation: 5,2 W
T
amb
=
60
°
C maximum
R
th j-a
R
th j-tab
=
Since R
th j-tab
+
R
th tab-h
=
8 K/W, R
th h-a
=
17,3
8
≈
9 K/W.
D.C. CHARACTERISTICS
A.C. CHARACTERISTICS
T
amb
= 25
°
C; V
P
= 14,4 V; R
L
= 4
; f = 1 kHz; unless otherwise specified; see also Fig.3
Supply voltage range (pin 3)
Repetitive peak output current
Total quiescent current
at V
P
= 14,4 V
at V
P
= 18 V
V
P
I
ORM
6 to 18 V
<
4 A
I
tot
I
tot
typ.
typ.
30 mA
40 mA
Output power at d
tot
= 10%; with bootstrap (note 1)
V
P
= 14,4 V; R
L
= 2
P
o
>
typ.
>
typ.
typ.
10 W
12 W
6 W
7 W
3,5 W
V
P
= 14,4 V; R
L
= 4
P
o
V
P
= 14,4 V; R
L
= 8
Output power at d
tot
= 1%; with bootstrap (note 1)
V
P
= 14,4 V; R
L
= 2
V
P
= 14,4 V; R
L
= 4
V
P
= 14,4 V; R
L
= 8
Output voltage (r.m.s. value)
R
L
= 1 k
; d
tot
= 0,5%
Output power at d
tot
= 10%; without bootstrap
Voltage gain
P
o
P
o
P
o
P
o
typ.
typ.
typ.
9,5 W
6 W
3 W
V
o(rms)
P
o
typ.
>
5 V
4,5 W
preamplifier (note 2)
G
v1
typ.
17,7 dB
16,7 to 18,7 dB
29,5 dB
28,5 to 30,5 dB
power amplifier
G
v2
typ.
total amplifier
G
v tot
typ.
47 dB
46,2 to 48,2 dB
R
th tab-h
R
th h-a
150
60
–
5 2
17,3 K/W
=
=
+
+
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