參數(shù)資料
型號(hào): TCST1030
廠商: Vishay Semiconductors
文件頁(yè)數(shù): 1/11頁(yè)
文件大?。?/td> 236K
描述: SENSR OPTO SLOT 3.1MM TRANS THRU
標(biāo)準(zhǔn)包裝: 65
系列: *
檢測(cè)距離: 0.122"(3.1mm)
檢測(cè)方法: 可傳導(dǎo)的
輸出配置: 光電晶體管
電流 - DC 正向(If): 60mA
電流 - 集電極 (Ic)(最大): 100mA
電壓 - 集電極發(fā)射極擊穿(最大): 70V
響應(yīng)時(shí)間: 15µs,10µs
安裝類型: 通孔
封裝/外殼: 開(kāi)槽模塊,4 引線雙排
包裝: 管件
類型: 無(wú)放大
工作溫度: -25°C ~ 85°C
 
Document Number: 83763
For technical questions, contact: sensorstechsupport@vishay.com
www.vishay.com
Rev. 1.8, 20-Sep-10
1
Transmissive Optical Sensor with Phototransistor Output
TCST1030
Vishay Semiconductors
DESCRIPTION
The TCST1030 is a transmissive sensor that include an
infrared emitter and phototransistor, located face-to-face on
the optical axes in a leaded package which blocks visible
light.
FEATURES
"Package type: leaded
"Detector type: phototransistor
"Dimensions (L x W x H in mm): 8.3 x 4.7 x 8.15
"Gap (in mm): 3.1
"Aperture: none
"Typical output current under test: I
C
 = 2.4 mA
"Daylight blocking filter
"Emitter wavelength: 950 nm
"Lead (Pb)-free soldering released
"Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
APPLICATIONS
"Optical switch
"Shaft encoder
"Detection of opaque material such as paper
"Detection of magnetic tapes
Note
(1)
Conditions like in table basic characteristics/coupler
Note
(1)
MOQ: minimum order quantity
19171_1
21837
PRODUCT SUMMARY
PART NUMBER
GAP WIDTH
(mm)
APERTURE WIDTH
(mm)
TYPICAL OUTPUT
CURRENT UNDER TEST
(1)
(mA)
DAYLIGHT
BLOCKING FILTER
INTEGRATED
TCST1030
3.1
-
2.4
Yes
ORDERING INFORMATION
ORDERING CODE
PACKAGING
VOLUME
(1)
REMARKS
TCST1030
Tube
MOQ: 5200 pcs, 65 pcs/tube
3.4 mm lead length
ABSOLUTE MAXIMUM RATINGS (T
amb
 = 25 癈, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
COUPLER
Total power dissipation
T
amb
 d 25 癈
P
tot
250
mW
Ambient temperature range
T
amb
- 25 to + 85
Storage temperature range
T
stg
- 25 to + 100
Soldering temperature
1.6 mm from case, t d 10 s
T
sd
260
INPUT (EMITTER)
Reverse voltage
V
R
6
V
Forward current
I
F
60
mA
Forward surge current
t
p
 d 10 約
I
FSM
3
A
Power dissipation
T
amb
 d 25 癈
P
V
100
mW
Junction temperature
T
j
100
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