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參數(shù)資料
| 型號： | TC9WMA1FK |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA CMOS Digital Integrated Circuits Silicon Monolithic |
| 中文描述： | 東芝的CMOS數(shù)字集成電路硅單片 |
| 文件頁數(shù)： | 8/12頁 |
| 文件大小： | 189K |
| 代理商： | TC9WMA1FK |
TC9WMA1FK
2001-10-16
8
E
2
PROM Characteristics
(GND 0 V, 3.0 V
V
CC
3.6 V, T
opr
40~85°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
All erase time
t
E
6
10
ms
Program time
t
P
6
10
ms
Endurance
N
EW
1 10
5
Times
Data retention time
t
RET
10
Year
E
2
PROM Characteristics
(GND 0 V, 2.7 V
V
CC
3.6 V, T
opr
40~85°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
All erase time
t
E
7
13
ms
Program time
t
P
7
13
ms
Endurance
N
EW
1 10
5
Times
Data retention time
t
RET
10
Year
Capacitance Characteristics
(Ta 25°C)
Characteristics
Symbol
Test Condition
V
CC
(V)
Typ.
Unit
Input capacitance
C
IN
3.3
4
pF
Output capacitance
C
O
3.3
3
pF
Equivalent Internal capacitance
C
PD
f
IN
1 MHz
(Note5)
3.3
8.5
pF
Note 5: C
PD
denotes the IC’s internal equivalent capacitance calculated from the amount of current it consumes
while operating.
The average current consumption during non-loaded operation is obtained from the equations below.
I
CC (Read)
f
CLK
C
PD
V
CC
I
CC1
I
CC2
3.5/24
I
CC (Prog)
f
CLK
C
PD
V
CC
I
CC1
I
CC3
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| TC9WMA1FKTE85L | 制造商:Toshiba America Electronic Components 功能描述:EEPROM - Bulk |
| TC9WMA1FKTE85LF | 制造商:Toshiba America Electronic Components 功能描述:EEPROM SERL 1KBIT 128X8 3.3V 8SSOP - Bulk |
| TC9WMA2FK | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:CMOS Digital Integrated Circuits Silicon Monolithic 2,048-Bit (256 】 8 Bit) Serial E2PROM |
| TC9WMA2FKTE85L | 制造商:Toshiba America Electronic Components 功能描述:EEPROM - Bulk |
| TC9WMB1AFK | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:CMOS Digital Integrated Circuits Silicon Monolithic |
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