參數(shù)資料
型號(hào)： TC58DVM82F1FT00
廠商： Toshiba Corporation
英文描述： 128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM
中文描述： 128兆位（16米x 8 BITS/8M x 16位）的CMOS NAND型E2PROM的
文件頁(yè)數(shù)： 32/34頁(yè)
文件大?。?/td> 369K
代理商： TC58DVM82F1FT00
TC58DVM72A1FT00/ TC58DVM72F1FT00
TC58DAM72A1FT00/ TC58DAM72F1FT00
2003-01-24 32/34
(13)
Invalid blocks (bad blocks)
The device contains unusable blocks. Therefore, at the time of use, please check whether a block is bad and
do not use these bad blocks.
At the time of shipment, all data bytes in a Valid Block are FFh(x8) or
FFFFh(x16). For Bad Block, all bytes are not in the FFh state(x8) or FFFFh
state(x16). Please don’t perform erase operation to Bad Block.
Check if the device has any bad blocks after installation into the system.
Figure 27 shows the test flow for bad block detection. Bad blocks which are
detected by the test flow must be managed as unusable blocks by the
system.
A bad block does not affect the performance of good blocks because it is
isolated from the Bit line by the Select gate
The number of valid blocks at the time of shipment is as follows:
MIN
TYP.
MAX
UNIT
Valid (Good) Block Number
1004

1024
Block
Bad Block Test Flow
Bad Block
Bad Block
Figure 26.
Pass
Read Check
Start
Bad Block
*
1
Block No.
1024
End
Read Check : to verify the column address 517
bytes(x8) or 256 and 261
words(x16) of the first page in the
block with FFh(x8) or FFFFh(x16)
Yes
Fail
Figure 27
Block No
1
No
Block No.
Block No. 1
*
1: No erase operation is allowed to detected bad blocks
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