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參數(shù)資料
| 型號： | TC58DAM82F1FT00 |
| 廠商： | Toshiba Corporation |
| 英文描述： | 128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM |
| 中文描述： | 128兆位（16米x 8 BITS/8M x 16位）的CMOS NAND型E2PROM的 |
| 文件頁數(shù)： | 22/34頁 |
| 文件大?。?/td> | 369K |
| 代理商： | TC58DAM82F1FT00 |
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TC58DVM72A1FT00/ TC58DVM72F1FT00
TC58DAM72A1FT00/ TC58DAM72F1FT00
2003-01-24 22/34
Auto Page Program
The device carries out an Automatic Page Program operation when it receives a “10H” Program command after
the address and data have been input. The sequence of command, address and data input is shown below.
(Refer to the detailed timing chart.)
Auto Block Erase
The Auto Block Erase operation starts on the rising edge of
WE
after the Erase Start command “D0H”
which follows the Erase Setup command “60H”. This two-cycle process for Erase operations acts as an ertra layer
of protection from aceidental erasure of data due to external noise. The device automatically executes the Erase
and Verify operations.
Pass
80
10
Data input
0 to 527
70
I/O
Address
input
Data input
command
Program
command
Status Read
command
Fail
BY
/
RY
BY
/
RY
completion of the operation.
automatically returns to Ready after
Figure 7. Auto Page Program operation
The data is transferred (programmed) from the register to the selected
page on the rising edge of WE following input of the “10H” command.
After programming, the programmed data is transferred back to the
register to be automatically verified by the device. If the programming
does not succeed, the Program/Verify operation is repeated by the device
until success is achieved or until the maximum loop number set in the
device is reached.
Data input
Selected
page
Reading & verification
Program
Pass
I/O
Fail
BY
/
RY
60
D0
70
Block Address
input: 2 cycles
Status Read
command
Busy
Erase Start
command
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| TC58DVM72A1F | 128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM |
| TC58DVM72A1FT00 | 128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM |
| TC58DVM72F1FT00 | 128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM |
| TC58DVM82A1FT00 | 128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM |
| TC58DVM82F1FT00 | 128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM |
相關代理商/技術參數(shù) |
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| TC58DVG02A1FT | 功能描述:IC FLASH 1GBIT 50NS 48TSOP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:576 系列:- 格式 - 存儲器:閃存 存儲器類型:閃存 - NAND 存儲容量:512M（64M x 8） 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應商設備封裝:48-TSOP 包裝:托盤 其它名稱:497-5040 |
| TC58DVG02A1FT00 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
| TC58DVG02A1FT00BBH | 制造商:Toshiba America Electronic Components 功能描述: |
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