- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385904 > TC55VEM208ASTN55 (Toshiba Corporation) TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS PDF資料下載
參數(shù)資料
| 型號(hào)： | TC55VEM208ASTN55 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
| 中文描述： | 東芝馬鞍山數(shù)字集成電路硅柵CMOS |
| 文件頁數(shù)： | 4/11頁 |
| 文件大?。?/td> | 173K |
| 代理商： | TC55VEM208ASTN55 |
TC55VEM208ASTN40,55
2002-08-07 4/11
AC CHARACTERISTICS AND OPERATING CONDITIONS
(Ta
=
40° to 85°C, V
DD
=
2.7 to 3.6 V)
READ CYCLE
TC55VEM208ASTN
40
55
SYMBOL
PARAMETER
MIN
MAX
MIN
MAX
UNIT
t
RC
Read Cycle Time
40
55
t
ACC
Address Access Time
40
55
t
CO
Chip Enable Access Time
40
55
t
OE
Output Enable Access Time
25
30
t
COE
Chip Enable Low to Output Active
5
5
t
OEE
Output Enable Low to Output Active
0
0
t
OD
Chip Enable High to Output High-Z
20
25
t
ODO
Output Enable High to Output High-Z
20
25
t
OH
Output Data Hold Time
10
10
ns
WRITE CYCLE
TC55VEM208ASTN
40
55
SYMBOL
PARAMETER
MIN
MAX
MIN
MAX
UNIT
t
WC
Write Cycle Time
40
55
t
WP
Write Pulse Width
30
40
t
CW
Chip Enable to End of Write
35
45
t
AS
Address Setup Time
0
0
t
WR
Write Recovery Time
0
0
t
ODW
R/W Low to Output High-Z
20
25
t
OEW
R/W High to Output Active
0
0
t
DS
Data Setup Time
20
25
t
DH
Data Hold Time
0
0
ns
Note: t
OD
, t
ODO
and t
ODW
are specified in time when an output becomes high impedance, and are not judged depending on an
output voltage level.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TC55VL818FF-75 | 512K Word x 18 Bit Synchronous No-turnround Static RAM(512K 字x18位同步無轉(zhuǎn)向靜態(tài) RAM) |
| TC55VL818FF-83 | 512K Word x 18 Bit Synchronous No-turnround Static RAM(512K 字x18位同步無轉(zhuǎn)向靜態(tài) RAM) |
| TC58128DC | 128M Bit (16M×8Bits ) CMOS NAND EEPROM(16M×8位 CMOS與非EEPROM) |
| TC58128FTI | 128M Bit (16M×8Bits ) CMOS NAND EEPROM(16M×8位 CMOS與非EEPROM) |
| TC58128FT | 128M Bit (16M×8Bits ) CMOS NAND EEPROM(16M×8位 CMOS與非EEPROM) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TC55VEM208ASTN55LA | 制造商:Toshiba America Electronic Components 功能描述: |
| TC55VEM316AXBN | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
| TC55VEM316AXBN40 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
| TC55VEM316AXBN55 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
| TC55VEM416AXBN55 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:1,048,576-WORD BY 16-BIT FULL CMOS STATIC RAM |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。