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參數(shù)資料
| 型號(hào)： | TC55VBM416AFTN55 |
| 廠商： | Toshiba Corporation |
| 英文描述： | CABLE 30 COND RIBBON WHT 100FT |
| 中文描述： | 1,048,576字由16位/ 2097152字的8位全的CMOS靜態(tài)RAM |
| 文件頁(yè)數(shù)： | 6/14頁(yè) |
| 文件大小： | 204K |
| 代理商： | TC55VBM416AFTN55 |
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TC55VBM416AFTN55
2002-08-29 6/14
AC CHARACTERISTICS AND OPERATING CONDITIONS
(Ta
=
40° to 85°C, V
DD
=
2.3 to 3.6 V)
READ CYCLE
SYMBOL
PARAMETER
MIN
MAX
UNIT
t
RC
Read Cycle Time
70
t
ACC
Address Access Time
70
t
CO1
Chip Enable(
1
CE
) Access Time
70
t
CO2
Chip Enable(CE2) Access Time
70
t
OE
Output Enable Access Time
35
t
BA
Data Byte Control Access Time
70
t
COE
Chip Enable Low to Output Active
5
t
OEE
Output Enable Low to Output Active
0
t
BE
Data Byte Control Low to Output Active
5
t
OD
Chip Enable High to Output High-Z
30
t
ODO
Output Enable High to Output High-Z
30
t
BD
Data Byte Control High to Output High-Z
30
t
OH
Output Data Hold Time
10
ns
WRITE CYCLE
SYMBOL
PARAMETER
MIN
MAX
UNIT
t
WC
Write Cycle Time
70
t
WP
Write Pulse Width
50
t
CW
Chip Enable to End of Write
55
t
BW
Data Byte Control to End of Write
55
t
AS
Address Setup Time
0
t
WR
Write Recovery Time
0
t
ODW
R/W Low to Output High-Z
30
t
OEW
R/W High to Output Active
0
t
DS
Data Setup Time
30
t
DH
Data Hold Time
0
ns
Note: t
OD
, t
ODO
, t
BD
and t
ODW
are specified in time when an output becomes high impedance, and are not judged depending on
an output voltage level.
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