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參數(shù)資料
| 型號(hào)： | TC55VBM416AFTN55 |
| 廠商： | Toshiba Corporation |
| 英文描述： | CABLE 30 COND RIBBON WHT 100FT |
| 中文描述： | 1,048,576字由16位/ 2097152字的8位全的CMOS靜態(tài)RAM |
| 文件頁(yè)數(shù)： | 3/14頁(yè) |
| 文件大小： | 204K |
| 代理商： | TC55VBM416AFTN55 |
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TC55VBM416AFTN55
2002-08-29 3/14
OPERATING MODE
MODE
1
CE
CE2
OE
R/W BYTE
LB
UB
I/O1~I/O8
I/O9~I/O15
I/O16
POWER
L
H
L
H
L
*
*
Output
High-Z
A-1
I
DDO
I
DDO
L
H
L
H
H
L
L
Output
Output
Output
L
H
L
H
H
H
L
High-Z
Output
Output
I
DDO
Read
L
H
L
H
H
L
H
Output
High-Z
High-Z
I
DDO
L
H
*
L
L
*
*
Input
High-Z
A-1
I
DDO
I
DDO
L
H
*
L
H
L
L
Input
Input
Input
L
H
*
L
H
H
L
High-Z
Input
Input
I
DDO
Write
L
H
*
L
H
L
H
Input
High-Z
High-Z
I
DDO
L
H
H
H
L
*
*
High-Z
High-Z
A-1
I
DDO
L
H
H
H
H
L
L
High-Z
High-Z
High-Z
I
DDO
L
H
H
H
H
H
L
High-Z
High-Z
High-Z
I
DDO
Output Deselect
L
H
H
H
H
L
H
High-Z
High-Z
High-Z
I
DDO
H
*
*
*
H or L
*
*
High-Z
High-Z
High-Z
I
DDS
*
L
*
*
H or L
*
*
High-Z
High-Z
High-Z
I
DDS
Standby
*
*
*
*
H
H
H
High-Z
High-Z
High-Z
I
DDS
*
= don't care
H = logic high
L = logic low
MAXIMUM RATINGS
SYMBOL
RATING
VALUE
UNIT
V
DD
Power Supply Voltage
0.3~4.2
V
V
IN
Input Voltage
0.3
*
~4.2
V
V
I/O
Input/Output Voltage
0.5~V
DD
+
0.5
V
P
D
Power Dissipation
0.6
W
T
solder
Soldering Temperature (10s)
260
°C
T
stg
Storage Temperature
55~150
°C
T
opr
Operating Temperature
40~85
°C
*
:
2.0 V when measured at a pulse width of 20ns
DC RECOMMENDED OPERATING CONDITIONS (
Ta
=
40° to 85°C
)
SYMBOL
PARAMETER
MIN
TYP
MAX
UNIT
V
DD
Power Supply Voltage
2.3
3.6
V
V
DD
=
2.3 V~2.7 V
2.0
V
IH
Input High Voltage
V
DD
=
2.7 V~3.6 V
2.2
V
DD
+
0.3
V
V
IL
Input Low Voltage
0.3
*
V
DD
×
0.24
V
V
DH
Data Retention Supply Voltage
1.5
3.6
V
*
:
2.0 V when measured at a pulse width of 20ns
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