參數(shù)資料
型號： TC55NEM208A
廠商： Toshiba Corporation
英文描述： TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
中文描述： 馬鞍山暫定東芝數(shù)字集成電路硅柵CMOS
文件頁數(shù)： 1/10頁
文件大?。?/td> 107K
代理商： TC55NEM208A
TC55NEM208AFPN/AFTN55,70
2002-09-18 1/10
TENTATIVE
524,288-WORD BY 8-BIT STATIC RAM
DESCRIPTION
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
The TC55NEM208AFPN/AFTN is a 4,194,304-bit static random access memory (SRAM) organized as 524,288
words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a
single 5V
±
10% power supply. Advanced circuit technology provides both high speed and low power at an operating
current of 3 mA/MHz (typ) and a minimum cycle time of 55 ns. It is automatically placed in low-power mode at 1
μ
A
standby current (typ) when chip enable (
CE
) is asserted high. There are two control inputs.
CE
is used to select
the device and for data retention control, and output enable (
OE
) provides fast memory access. This device is well
suited to various microprocessor system applications where high speed, low power and battery backup are required.
And, with a guaranteed operating range of
40° to 85°C, the TC55NEM208AFPN/AFTN can be used in
environments exhibiting extreme temperature conditions. The TC55NEM208AFPN/AFTN is available in a
standard plastic 32-pin small-outline package (SOP) and normal and reverse pinout plastic 32-pin
thin-small-outline package (TSOP).
FEATURES
Low-power dissipation
Operating: 15 mW/MHz (typical)
Single power supply voltage of 5 V
±
10%
Power down features using
CE
.
Data retention supply voltage of 2.0 to 5.5 V
Direct TTL compatibility for all inputs and outputs
Wide operating temperature range of
40° to 85°C
Standby Current (maximum):20
μ
A
PIN ASSIGNMENT
(TOP VIEW)
PIN NAMES
32 PIN SOP &
TSOP
A0~A18
Address Inputs
R/W
Read/Write Control
OE
Output Enable
CE
Chip Enable
I/O1~I/O8
Data Inputs/Outputs
V
DD
Power (
+
5 V)
GND
Ground
Access Times (maximum):
TC55NEM208AFPN/AFTN
55
70
Access Time
55 ns
70 ns
CE
Access Time
55 ns
70 ns
OE
Access Time
30 ns
35 ns
Package:
SOP32-P-525-1.27 (AFPN)
TSOP II32-P-400-1.27 (AFTN) (Weight: g typ)
(Weight: g typ)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
V
DD
A15
A17
R/W
A13
A8
A9
A11
A10
I/O8
I/O7
I/O6
I/O5
I/O4
A18
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
GND
CE
OE
(AFPN/AFTN)
相關(guān)PDF資料
PDF描述
TC55NEM208AFPN TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC55NEM208AFPN55 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC55NEM208AFTN TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC55NEM208AFTN55 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC55NEM208AFPN70 Addressable Digital Potentiometer
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TC55NEM208AFGN55LA 功能描述:IC SRAM 4MBIT 55NS 32SOP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:576 系列:- 格式 - 存儲器:閃存 存儲器類型:閃存 - NAND 存儲容量:512M（64M x 8） 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤 其它名稱:497-5040
TC55NEM208AFGN70LA 功能描述:IC SRAM 4MBIT 70NS 32SOP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:576 系列:- 格式 - 存儲器:閃存 存儲器類型:閃存 - NAND 存儲容量:512M（64M x 8） 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤 其它名稱:497-5040
TC55NEM208AFPN 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC55NEM208AFPN55 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC55NEM208AFPN70 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
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