參數(shù)資料
型號: TBN6301E
廠商: Tachyonics CO,. LTD.
英文描述: NPN SILICON RF TRANSISTOR
中文描述: NPN硅射頻晶體管
文件頁數(shù): 5/6頁
文件大?。?/td> 232K
代理商: TBN6301E
Page 5 of 6
http://www.tachyonics.co.kr
March. 2005.
Rev. 1.0
Preliminary Specification
TBN6301 series
Insertion Power Gain
vs. Collector Current
Maximum Available Gain
vs. Collector Current
1
10
100
0
2
4
6
8
10
12
14
16
I
2
|
2
Collector Current, I
C
(mA)
V
CE
= 3 V
V
CE
= 5 V
V
CE
= 7 V
f = 1 GHz
1
10
100
0
5
10
15
20
M
Collector Current, I
C
(mA)
V
CE
= 3 V
V
CE
= 5 V
V
= 7 V
f = 1 GHz
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