參數(shù)資料
型號(hào): TBN6301E
廠商: Tachyonics CO,. LTD.
英文描述: NPN SILICON RF TRANSISTOR
中文描述: NPN硅射頻晶體管
文件頁數(shù): 4/6頁
文件大小: 232K
代理商: TBN6301E
Page 4 of 6
http://www.tachyonics.co.kr
March. 2005.
Rev. 1.0
Preliminary Specification
TBN6301 series
Base Current, Collector Current
vs. Base to Emitter Voltage
Gain Bandwidth Product
vs. Collector Current
Insertion Power Gain
vs. Frequency
Collector Current
vs. Collector to Emitter Voltage
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
10
-9
10
-8
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
V
CE
= 3 V
B
B
C
Base to Emitter Voltage, V
BE
(V)
0
1
2
3
4
5
6
0
10
20
30
40
50
60
70
I
B
Step = 50
μ
A
C
C
Collector to Emitter Voltage, V
CE
(V)
0.1
1
0
5
10
15
20
25
30
V
CE
= 3 V
I
C
= 10 mA
I
2
|
2
Frequency (GHz)
1
10
100
0
2
4
6
8
10
12
14
G
T
Collector Current, I
C
(mA)
V
CE
= 3 V
V
CE
= 5 V
V
CE
= 7 V
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