參數(shù)資料
型號: T835-xxxB
廠商: 意法半導體
英文描述: High Performance Triacs(高性能雙向可控硅)
中文描述: 高性能雙向(高性能雙向可控硅)
文件頁數(shù): 2/5頁
文件大?。?/td> 102K
代理商: T835-XXXB
P
G(AV)
= 1 W P
GM
= 10 W (tp = 20
μ
s) I
GM
= 4 A (tp = 20
μ
s)
GATE CHARACTERISTICS
(maximum values)
Symbol
Test Conditions
Quadrant
Suffix
Unit
T810
T835
I
GT
V
D
=12V (DC) R
L
=33
Tj=25
°
C
I-II-III
MAX
10
35
mA
V
GT
V
D
=12V (DC) R
L
=33
Tj=25
°
C
I-II-III
MAX
1.3
V
V
GD
V
D
=V
DRM
R
L
=3.3k
Tj=125
°
C
I-II-III
MIN
0.2
V
I
L
I
G
=1.2 I
GT
Tj=25
°
C
I-II-III
MAX
25
60
mA
I
H
*
I
T
= 100mA gate open
Tj=25
°
C
MAX
15
35
mA
V
TM
*
I
TM
= 11A tp= 380
μ
s
Tj=25
°
C
MAX
1.5
V
I
DRM
I
RRM
V
DRM
Rated
V
RRM
Rated
Tj=25
°
C
MAX
10
μ
A
Tj=125
°
C
MAX
2
mA
dV/dt *
Linear slope up to
V
D
=67%V
DRM
gate open
Tj=125
°
C
MIN
50
500
V/
μ
s
(dI/dt)c *
(dV/dt)c = 0.1V/
μ
s
Tj=125
°
C
MIN
5.4
9
A/ms
(dV/dt)c = 15V/
μ
s
Tj=125
°
C
MIN
2.7
4.5
A/ms
* For either polarity of electrode A
2
voltage with reference to electrode A
1
.
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Value
Unit
Rth (j-c)
Junction to case for DC
2.1
°
C/W
Rth (j-c)
Junction to case for AC 360
°
conduction angle ( F= 50 Hz)
1.6
°
C/W
Rth (j-a)
Junction to ambient (S = 0.5 cm
2
)
70
°
C/W
THERMAL RESISTANCES
ORDERING INFORMATION
Add "-TR" suffix for Tape and Reel shipment
T
8
10
-
600
B
TRIAC
CURRENT
SENSITIVITY
VOLTAGE
PACKAGE
B = DPAK
T810-xxxB / T835-xxxB
2/5
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