參數(shù)資料
型號: T835-xxxB
廠商: 意法半導(dǎo)體
英文描述: High Performance Triacs(高性能雙向可控硅)
中文描述: 高性能雙向(高性能雙向可控硅)
文件頁數(shù): 1/5頁
文件大?。?/td> 102K
代理商: T835-XXXB
May 1998 Ed : 1A
Symbol
I
T(RMS)
Parameter
Value
8
Unit
A
RMS on-state current
(360
°
conduction angle)
Tc =110
°
C
I
TSM
Non repetitive surge peak on-state current
( Tj initial = 25
°
C )
tp = 8.3 ms
85
A
tp = 10 ms
80
I
2
t
I
2
t value for fusing
tp = 10 ms
32
A
2
s
dI/dt
Critical rate of rise of on-state current
I
G
= 50mA di
G
/dt = 0.1A/
μ
s
Repetitive
F = 50 Hz
20
A/
μ
s
Non
Repetitive
100
Tstg
Tj
Storage temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
°
C
°
C
T
Maximum temperature for soldering during 10 s
260
°
C
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
T810-/T835-
Unit
400B
400
600B
600
V
DRM
V
RRM
Repetitive peak off-state voltage
Tj = 125
°
C
V
A1
A2
A2
G
DPAK
(Plastic)
T810-xxxB
T835-xxxB
HIGH PERFORMANCE TRIACS
I
TRMS
= 8 A
SENSITIVE GATE : I
GT
10mA and 35mA
HIGH COMMUTATION TECHNOLOGY
HIGH I
TSM
CAPABILITY
FEATURES
The T810-xxxB and T835-xxxB series are using
high performance TOPGLASS PNPN technology.
These devices are intented for AC control applica-
tions, using surface mount technology where high
commutating and surge performances are re-
quired (like power tools, Solid State Relay).
DESCRIPTION
1/5
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