參數(shù)資料
型號： T436416C
廠商： TM Technology, Inc.
英文描述： 4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM
中文描述： 4米× 16 SDRAM的100萬x 16Bit的X 4Banks同步DRAM
文件頁數(shù)： 17/28頁
文件大小： 651K
代理商： T436416C
TE
CH
tm
Page Read & Write Cycle at Same Bank @ Burst Length = 4
0
1
2
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T436416C
TM Technology Inc. reserves the right
P.17
to change products or specifications without notice.
Publication Date: AUG. 2004
Revision: A
C L O C K
C K E
C S
R A S
C A S
A D D R
A 1 3 ,A 1 2
A 1 0 /A P
C L = 2
C L = 3
W E
6
7
8
9
1 0
1 1
1 2
1 3
1 4
1 5
1 6
1 7
1 8
1 9
H IG H
t
C C D
D Q M
D Q
:D o n 't ca re
R o w A ctiv e
(A -B n a k )
R ea d (A -
B n a k )
R ea d (A -
B n a k )
W rite (A -
B n a k )
W rite (A -
B n a k )
P rec h a rg e
(A -B n a k )
* N o te 1
* N o te 3
* N o te 2
t
R C D
t
R D L
t
C D L
R a
C a0
C b 0
C c0
C d 0
Q a0
Q a1
Q a0
Q a1
Q b 0
Q b 0
Q b 1
Q b 2
Q b 1
D c0
D c1
D c0
D c1
D d 0
D d 1
D d 0
D d 2
*Note : 1. To write data before burst read ends, DQM should be asserted three cycle prior to write command to
avoid bus contention.
2. Row precharge will interrupt writing. Last data input,
t
RDL
before Row precharge, will be written.
3. DQM should mask invalid input data on precharge command cycle when asserting precharge before
end of burst. Input data after Row precharge cycle will be masked internally.
相關PDF資料
PDF描述
T436416C-6S 4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM
T436416C-6SG 4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM
T436416C-7S 4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM
T436416C-7SG 4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM
T436416D 4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM
相關代理商/技術參數(shù)
參數(shù)描述
T436416C-6S 制造商:TMT 制造商全稱:TMT 功能描述:4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM
T436416C-6SG 制造商:TMT 制造商全稱:TMT 功能描述:4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM
T436416C-7S 制造商:TMT 制造商全稱:TMT 功能描述:4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM
T436416C-7SG 制造商:TMT 制造商全稱:TMT 功能描述:4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM
T436416D 制造商:TMT 制造商全稱:TMT 功能描述:4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM
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