- 您現(xiàn)在的位置：買(mǎi)賣IC網(wǎng) > PDF目錄361344 > T436416C-7SG (TM Technology, Inc.) 4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM PDF資料下載
參數(shù)資料
| 型號(hào)： | T436416C-7SG |
| 廠商： | TM Technology, Inc. |
| 英文描述： | 4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM |
| 中文描述： | 4米× 16 SDRAM的100萬(wàn)x 16Bit的X 4Banks同步DRAM |
| 文件頁(yè)數(shù)： | 4/28頁(yè) |
| 文件大小： | 651K |
| 代理商： | T436416C-7SG |
第1頁(yè)第2頁(yè)第3頁(yè)當(dāng)前第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)
TE
CH
tm
ABSOLUTE MAXIMUM RATINGS
T436416C
TM Technology Inc. reserves the right
P. 4
to change products or specifications without notice.
Publication Date: AUG. 2004
Revision: A
Parameter
Symbol
Value
Unit
Voltage on Any Pin Relative To Vss
V
IN
,V
OUT
-1.0 to 4.6
V
Supply Voltage Relative To Vss
V
DD
,V
DDQ
-1.0 to 4.6
V
Short circuit Output Current
Iout
P
D
50
mA
Power Dissipation
1
W
°
C
°
C
Operating Temperature
TOPR
Tstg
0 to +70
Storage Temperature
-55 to +150
Note :
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
RECOMMENDED DC OPERATING CONDITIONS
(T
A
= 0 to +70
°
C
, Voltage referenced to V
SS
=0V)
Parameter
Symbol
Min.
Typ
Max.
Unit
Notes
Supply Voltage
V
DD
,V
DDQ
3.0
3.3
3.6
V
Input High Voltage
V
IH
2.0
3.0
V
DD
+0.3V
V
1
Input Low Voltage
V
IL
-0.3
0
0.8
V
2
Output logic high voltage
V
OH
2.4
-
-
V
I
OH
=-2mA
Output logic low voltage
V
OL
-
-
0.4
V
I
OL
=2mA
Input leakage current
I
IL
-5
-
5
uA
3
Output leakage current
Note :
1. V
IH
(max) = 4.6V AC for pulse width
≤
10ns acceptable.
2. V
IL
(min) = -1.5V AC for pulse width
≤
10ns acceptable.
3. Any input 0V
≤
V
IN
≤
V
DD
+ 0.3V , all other pin are not under test = 0V.
4. Dout = disable, 0V
≤
V
OUT
≤
V
DD .
CAPACITANCE
(T
A
=25
°
C
,V
DD
=3.3V, f = 1MHz)
I
OL
-5
-
5
uA
4
Pin
Symbol
C
CLK
C
ADD
C
OUT
C
IN
Min
2.0
2.0
2.0
2.0
Max
4.0
4.0
4.0
5.0
Unit
pF
pF
pF
pF
CLOCK
ADDRESS
DQ0 ~ DQ15
RAS,CAS,WE,CS,CKE,LDQM,
UDQM
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| T436416D | 4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM |
| T436416D-5C | 4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM |
| T436416D-5CG | 4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM |
| T436416D-5S | 4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM |
| T436416D-5SG | 4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| T436416D | 制造商:TMT 制造商全稱:TMT 功能描述:4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM |
| T436416D-5C | 制造商:TMT 制造商全稱:TMT 功能描述:4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM |
| T436416D-5CG | 制造商:TMT 制造商全稱:TMT 功能描述:4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM |
| T436416D-5S | 制造商:TMT 制造商全稱:TMT 功能描述:4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM |
| T436416D-5SG | 制造商:TMT 制造商全稱:TMT 功能描述:4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。