參數(shù)資料
型號(hào): T4312816A
廠商: TM Technology, Inc.
英文描述: 8M x 16 SDRAM
中文描述: 8米× 16內(nèi)存
文件頁數(shù): 25/29頁
文件大?。?/td> 711K
代理商: T4312816A
TE
CH
tm
Burst Read Single bit Write Cycle @ Burst Length = 2
0
1
2
3
4
Preliminary T4312816A
TM Technology Inc. reserves the right
P.25
to change products or specifications without notice.
Publication Date: APR. 2003
Revision: 0.B
C L O C K
C K E
C S
R A S
C A S
A D D R
B A
A 1 0 /A P
C L = 2
C L = 3
W E
5
6
7
8
9
1 0
1 1
1 2
1 3
1 4
1 5
1 6
1 7
1 8
1 9
H IG H
D Q M
D Q
:D o n 't c a re
* N o te2
R A a
C A a
R B b
C A b
R A c
C B c
C A d
R A a
R B b
R A c
D A a0
D A a0
D A b 0
D A b 0
D A b 1
D A b 1
D B c0
D B c0
D A d 0
D A d 1
D A d 0
D A d 1
R o w A c tiv e
(A -B a n k )
W rite (A -
B an k )
R o w A c tiv e
(A -B a n k )
R ead w ith A u to
P rech arg e (A -
B an k )
R o w A c tiv e
(A -B a n k )
W rite w ith A u to
P rech arg e (A -
B an k )
R ead (A -
B an k )
P rech arg e
(A -B a n k )
*Note : 1. BRSW modes is enabled by setting A
9
‘High’ at MRS (Mode Register Set).
At the BRSW Mode, the burst length at write is fixed to ‘1’ regardless of programmed burst length.
2. When BRSW write command with auto precharge is executed, keep it in mind that
t
RAS
should not
be violated.
Auto precharge is executed at the next cycle of burst-end, so in the case of BRSW write command,
the precharge command will be issued after two clock cycle.
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