參數(shù)資料
型號: T224162B-45
廠商: TM Technology, Inc.
英文描述: 256K x 16 DYNAMIC RAM EDO PAGE MODE
中文描述: 256K × 16動態(tài)隨機存儲器EDO公司頁面模式
文件頁數(shù): 5/14頁
文件大?。?/td> 143K
代理商: T224162B-45
TE
CH
tm
AC ELECTRICAL CHARACTERISTICS
(
continued
)
T224162B
Taiwan Memory Technology, Inc. reserves the right
P. 5
to change products or specifications without notice.
Publication Date:AUG. 2000
Revision:L
-22
-25
-28
-35
-45
- 50
AC CHARACTERISTICS
PARAMETER
Row Address Setup Time
Row Address Hold Time
RAS
to Column Address
Delay Time
Column Address Setup Time
tASC
Column Address Hold Time
tCAH
Column Address Hold Time
(Reference to RAS)
Column Address to RAS
Lead Time
Read Command Setup Time
tRCS
Read Command Hold Time
Reference to CAS
Read Command Hold Time
Reference to RAS
CAS
to Output in Low-Z
Output Buffer Turn-off
Delay From CASor RAS
Output Buffer Turn-off to
OE
SYM
MIN
MAX
MIN
MAX
MIN
MAX
MIN MAXMIN MAXMIN
MAX
UNIT
Notes
tASR
tRAH
0
0
0
0
0
0
ns
ns
5
5
5
5
5
5
tRAD
8
11
8
12
8
13
8
20
8
26
10
29
ns
8
0
0
0
0
0
0
ns
18
ns
18
4
4
4
4
6
7
tAR
17
19
21
30
40
45
ns
tRAL
11
12
13
15
19
23
ns
0
0
0
0
0
0
ns
15,18
9,15,
19
tRCH
0
0
0
0
0
0
ns
tRRH
0
0
0
0
0
0
ns
9
tCLZ
3
3
3
3
3
3
ns
20
ns
10,17,
20
ns
17,28
tOFF1
3
3
3
3
15
3
15
3
15
tOFF2
8
8
8
8
8
8
Write Command Setup Time
tWCS
0
0
0
0
0
0
ns
11,15,
18
ns
15,27
15
Write Command Hold Time
tWCH
Write Command Hold Time
(Reference to RAS)
Write Command Pulse
Width
Write Command to RAS
Lead Time
Write Command to CAS
Lead Time
Data-in Setup Time
Data-in Hold Time
Data-in Hold Time
(Reference to
RAS
)
RAS to WE Delay Time
tRWD 31
AC ELECTRICAL CHARACTERISTICS
(
continued
)
4
4
4
4
6
7
tWCR 19
19
21
30
46
51
ns
tWP
4
4
4
4
6
8
ns
15
tRWL
6
6
6
7
9
10
ns
15
tCWL
5
5
5
7
9
11
ns
15,19
tDS
tDH
0
4
0
4
0
4
0
4
0
6
0
7
ns
12,20
ns
12,20
ns
tDHR
19
19
21
30
40
45
34
37
51
61
70
ns
11
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