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參數(shù)資料
| 型號(hào)： | T15V4M16A |
| 廠商： | TM Technology, Inc. |
| 英文描述： | 256K X 16 LOW POWER CMOS STATIC RAM |
| 中文描述： | 256 × 16低功耗CMOS靜態(tài)RAM |
| 文件頁(yè)數(shù)： | 5/12頁(yè) |
| 文件大?。?/td> | 90K |
| 代理商： | T15V4M16A |
TE
CH
tm
CAPACITANCE
Preliminary T15V4M16A
Taiwan Memory Technology, Inc. reserves the right
P. 5
to change products or specifications without notice.
Publication Date: SEP. 2000
Revision:0.B
(f = 1 MHz, Ta = 25
°
C,)
PARAMETER
Input Capacitance
Input/ Output Capacitance
SYMBOL
C
IN
C
I/O
CONDITION
V
IN
= 0V
V
IN
=
V
OUT
= 0V
MAX.
8
10
UNIT
pF
pF
Note:
This parameter is guaranteed by device characterization and is not production tested.
AC TEST CONDITIONS
PARAMETER
CONDITIONS
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Reference Level
0.6V to 2.1V
3.0 ns
1.4V
C
L
=30pF+1TTL Load(55ns/70ns)
C
L
=100pF+1TTL Load(Load for 100ns)
Output Load
AC TEST LOADS AND WAVEFORM
DQ
Z
0
= 50 ohm
50 ohm
30 pF
Vt =1.4V
Fig.A * Including Scope and Jig Capacitance
TTL
C
L
*
Fig.B Output Load Equivalent
R
L
C
L
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