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參數(shù)資料
| 型號： | T15V2M08A-70P |
| 廠商： | TM Technology, Inc. |
| 英文描述： | 256K X 8 LOW POWER CMOS STATIC RAM |
| 中文描述： | 256K × 8低功耗CMOS靜態(tài)RAM |
| 文件頁數(shù)： | 7/12頁 |
| 文件大?。?/td> | 83K |
| 代理商： | T15V2M08A-70P |
TE
CH
tm
TIMING WAVEFORMS
READ CYCLE 1
(Address Controlled)
Preliminary T15V2M08A
Taiwan Memory Technology, Inc. reserves the right
P. 7
to change products or specifications without notice.
Publication Date: MAR. 2001
Revision:0.A
READ CYCLE 2
(Chip Enable Controlled)
Notes (READ CYCLE) :
1.
WE
are high for read cycle.
2. All read cycle timing is referenced from the last valid address to the first transition address.
3. t
HZ
and t
OHZ
are defined as the time at which the outputs achieve the open circuit condition referenced to
V
OH
or V
OL
levels.
4. At any given temperature and voltage condition. t
HZ
(max.) is less than t
LZ
(min.) both for a given device
and from device to device interconnection.
5. Transition is measured
±
200mV from steady state voltage with load. This parameter is sampled and not
100% tested.
6. Device is continuously selected with
1
CE
=V
IL
.
DON'T CARE
UNDEFINED
C E 1
t
OLZ
C E 2
t
ACE
t
OHZ
D
OUT
tRC
Ad dres s
tOH
tAA
DOUT
Previous Data Valid
Data Valid
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| T15V2M16B | 128K X 16 LOW POWER CMOS STATIC RAM |
| T15V2M16B-55S | 128K X 16 LOW POWER CMOS STATIC RAM |
| T15V2M16B-55SI | 128K X 16 LOW POWER CMOS STATIC RAM |
| T15V2M16B-70C | 128K X 16 LOW POWER CMOS STATIC RAM |
| T15V2M16B-70CI | 128K X 16 LOW POWER CMOS STATIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| T15V2M16B | 制造商:TMT 制造商全稱:TMT 功能描述:128K X 16 LOW POWER CMOS STATIC RAM |
| T15V2M16B-55S | 制造商:TMT 制造商全稱:TMT 功能描述:128K X 16 LOW POWER CMOS STATIC RAM |
| T15V2M16B-55SI | 制造商:TMT 制造商全稱:TMT 功能描述:128K X 16 LOW POWER CMOS STATIC RAM |
| T15V2M16B-70C | 制造商:TMT 制造商全稱:TMT 功能描述:128K X 16 LOW POWER CMOS STATIC RAM |
| T15V2M16B-70CI | 制造商:TMT 制造商全稱:TMT 功能描述:128K X 16 LOW POWER CMOS STATIC RAM |
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