參數(shù)資料
型號: T15V2M08A-70P
廠商: TM Technology, Inc.
英文描述: 256K X 8 LOW POWER CMOS STATIC RAM
中文描述: 256K × 8低功耗CMOS靜態(tài)RAM
文件頁數(shù): 6/12頁
文件大?。?/td> 83K
代理商: T15V2M08A-70P
TE
CH
tm
AC CHARACTERISTICS
(
Vcc
=2.7 to 3.6V, Gnd = 0V, Ta = -40
°
C to 85
°
C)
(1) READ CYCLE
Preliminary T15V2M08A
Taiwan Memory Technology, Inc. reserves the right
P. 6
to change products or specifications without notice.
Publication Date: MAR. 2001
Revision:0.A
-55
-70
-100
PARAMETER
SYM.
Min
55
-
-
-
10
10
-
5
-
Max
-
55
55
30
-
-
20
-
20
Min
70
-
-
-
10
10
-
5
-
Max
-
70
70
35
-
-
25
-
25
Min
100
-
-
-
10
10
-
5
-
Max
-
100
100
50
-
-
30
-
30
UNIT
Read Cycle Time
Address Access Time
Chip Enable Access Time
Output Enable Access Time
Output Hold from Address Change
Chip Enable to Output in Low-Z
Chip Disable to Output in High-Z
Output Enable to Output in Low-Z
Output Disable to Output in High-Z t
OHZ
(2)WRITE CYCLE
t
RC
t
AA
t
ACE
t
OE
t
OH
t
LZ
t
HZ
t
OLZ
ns
ns
ns
ns
ns
ns
ns
ns
ns
-55
-70
-100
PARAMETER
SYM.
Min
55
50
50
0
45
0
25
0
-
5
Max
-
-
-
-
-
-
-
-
25
-
Min
70
60
60
0
50
0
30
0
-
5
Max
-
-
-
-
-
-
-
-
25
-
Min
100
80
80
0
70
0
40
0
-
5
Max
-
-
-
-
-
-
-
-
30
-
UNIT
Write Cycle Time
Chip Enable to Write End
Address Valid to Write End
Address Setup Time
Write Pulse Width
Write Recovery Time
Data Valid to Write End
Data Hold Time
Write Enable to Output in High-Z
Output Active from Write End
t
WC
t
CW
t
AW
t
AS
t
WP
t
WR
t
DW
t
DH
t
WHZ
t
OW
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
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