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參數(shù)資料
| 型號(hào)： | T12 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 12A TRIACS |
| 中文描述： | 第12A雙向可控硅 |
| 文件頁(yè)數(shù)： | 5/7頁(yè) |
| 文件大?。?/td> | 119K |
| 代理商： | T12 |
BTA/BTB12 and T12 Series
5/7
Fig. 4:
On-state characteristics (maximum
values).
Fig. 5:
Surge peak on-state current versus
number of cycles.
Fig. 6:
Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10ms, and corresponding value of I2t.
Fig. 7:
Relative variation of gate trigger current,
holding current and latching current versus
junction temperature (typical values).
Fig. 8-1:
Relative variation of critical rate of
decrease of main current versus (dV/dt)c (typical
values) (BW/CW/T1235).
Fig. 8-2:
Relative variation of critical rate of
decrease of main current versus (dV/dt)c (typical
values) (TW).
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
1
10
100
ITM (A)
Tj=25°C
Tj max
Tj max.
Vto = 0.85V
Rd = 35 m
VTM(V)
1
10
100
1000
0
10
20
30
40
50
60
70
80
90
100
110
120
130
ITSM (A)
Non repetitive
Tj initial=25°C
Tc=90°C
One cycle
t=20ms
Number of cycles
0.01
0.10
1.00
10.00
10
100
1000
tp (ms)
ITSM (A), I2t (A2s)
Tj initial=25°C
ITSM
I2t
dI/dt limitation:
50A/μs
-40
-20
0
20
40
60
80
100
120
140
0.0
0.5
1.0
1.5
2.0
2.5
IGT,IH,IL[Tj] / IGT,IH,IL [Tj=25°C]
IGT
IH & IL
Tj(°C)
0.1
1.0
10.0
100.0
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
BW/CW/T1235
C
B
SW
(dV/dt)c (V/μs)
0.1
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.0
10.0
100.0
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
TW
(dV/dt)c (V/μs)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| T1235-600G | BOX ALUM UNPAINTED 8X6X3.5,1 |
| T1235H | 12A TRIACS |
| T1235H-600G | 12A TRIACS |
| T1235H-600G-TR | 12A TRIACS |
| T1235H-600T | 12A TRIACS |
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