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參數(shù)資料
| 型號(hào)： | SYS32256LKI-020 |
| 元件分類(lèi)： | SRAM |
| 英文描述： | 256K X 32 MULTI DEVICE SRAM MODULE, 20 ns, SMA64 |
| 封裝： | PLASTIC, SIMM-64 |
| 文件頁(yè)數(shù)： | 2/7頁(yè) |
| 文件大?。?/td> | 114K |
| 代理商： | SYS32256LKI-020 |
ISSUE 1.7 January 1999
SYS32256ZK/LK - 020/25/30/35
2
Parameter
Symbol
Test Condition
min
typ
max Unit
I/P Leakage Current
I
LI
V
IN = GND to VCC, Vcc=max.
-
±16 A
Output Leakage Current
I
LO
CS = V
IH, VI/O = GND to VCC
-
±16 A
Average Supply Current (20/25/30)
I
CC1
t
CYC = 20ns, CS = VIL, VIN = VIL/VCC-2.1V
-
1440 mA
Average Supply Current (35/45/55)
I
CC2
t
CYC = 35ns, CS= VIL, VIN =VIL/VCC-2.1V
-
1200 mA
Standby Supply Current TTL levels
I
SB1
CS = V
CC-2.1V, VIL > VIN > VCC-2.1V
-
320 mA
CMOS levels I
SB2
CS = V
CC-0.2V, 0.2 > VIN > VCC-0.2V
-
3.20
16 mA
Output Low Voltage
V
OL
I
OL = 8.0mA
-
0.4
V
Output High Voltage
V
OH
I
OH = -4.0mA
2.4
-
V
Typical values are at V
CC=5.0V,TA=25
°C and specified loading.
All values specified for 32 bit operation. I
SB2 = 0.8mA max. for low power option.
DC OPERATING CONDITIONS
Absolute Maximum Ratings (1)
Recommended Operating Conditions
Parameter
Symbol
min
typ
max
unit
Voltage on any pin relative to V
SS
V
T
-0.5V
-
+7.0
V
Power Dissipation
P
T
-
4.0
-
mW
Storage Temperature
T
STG
-55
-
+125
oC
Notes :
(1) Stresses above those listed may cause permanent damage to the device. This is a stress rating only and functional
operation of the device at those or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device
reliability.
Parameter
Symbol
min
typ
max
unit
Supply Voltage
V
CC
4.5
5.0
5.5
V
Input High Voltage
V
IH
2.2
-
6.0
V
Input Low Voltage
V
IL
-0.3
-
0.8
V
Operating Temperature
T
A
0
-
70
oC
T
AI
-40
-
85
oC
(I)
DC Electrical Characteristics (V
CC=5V±10%)
TA 0 to 70OC
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