參數(shù)資料
型號(hào)： SY171
廠商： Omron Electronics LLC
英文描述： Compact Reflective Phototransistor Output
中文描述： 緊湊型反射光電晶體管輸出
文件頁數(shù)： 2/7頁
文件大?。?/td> 227K
代理商： SY171
EE-SY110/113/171
EE-SY110/113/171
CHARACTERISTICS (T
A
= 25
°
C)
Item
Symbol
EE-SY110
Value
1.5 V max.
EE-SY171
Value
1.5 V max.
EE-SY113
Value
1.5 V max.
Condition
I
F
= 30 mA
Condition
I
F
= 30 mA
Condition
I
F
= 30 mA
Emitter
Forward
voltage
Reverse
current
Peak emission
wavelength
Dark current
V
F
I
R
10
μ
A max.
V
R
= 4 V
10
μ
A max.
V
R
= 4 V
10
μ
A max.
V
R
= 4 V
λ
p(L)
940 nm typ.
I
F
= 20 mA
940 nm typ.
I
F
= 20 mA
940 nm typ.
I
F
= 20 mA
Receiver
I
D
200 nA max.
V
CE
= 10 V
0lx
V
CE
= 10 V
200 nA max.
V
CE
= 10 V
0lx
V
CE
= 10 V
200 nA max.
V
CE
= 10 V
0lx
V
CE
= 10 V
Peak spectral
sensitivity
wavelength
Light current
λ
p(P)
850 nm typ.
850 nm typ.
850 nm typ.
Combination
I
L
200 to
2,000
μ
A
I
F
= 20 mA
V
= 10 V
White paper
with a
reflection
factor of
90% at a
distance of
5 mm
I
F
= 20 mA
V
CE
= 10 V*
V
CC
= 5 V
R
L
= 1 k
I
L
= 1 mA
50 to 500
μ
A
I
F
= 20 mA
V
= 10 V
White paper
with a
reflection
factor of
90% at a
distance of
3.5 mm
I
F
= 20 mA
V
CE
= 10 V*
V
CC
= 5 V
R
L
= 1 k
I
L
= 1 mA
160 to
1,600
μ
A
I
F
= 20 mA
V
= 10 V
White paper
with a
reflection
factor of
90% at a
distance of
4.4 mm
I
F
= 20 mA
V
CE
= 10 V*
V
CC
= 5 V
R
L
= 1 k
I
L
= 1 mA
Leakage
current
Rising time**
I
LEAK
2
μ
A max.
200 nA max.
2
μ
A max.
tr
30
μ
s typ.
30
μ
s typ.
30
μ
s typ.
30
μ
s typ.
30
μ
s typ.
30
μ
s typ.
Falling time**
tf
*The sensing object reflects no light.
**The following illustrations show the rising time, tr, and the falling time, tf.
Input
V
CC
Output
R
L
0
0
Input
t
Output
t
tr
90%
tf
Sensing object
Engineering Data
Note: The operating conditions of the photomicrosensor must be within the absolute maximum rating ranges.
TEMPERATURE CHARACTERISTICS
INPUT CHARACTERISTICS (TYPICAL)
Ambient temperature T
A
(
°
C)
F
F
I
F
, P
c
Forward voltage V
F
(V)
F
F
T
A
= --30
°
C
T
A
= +25
°
C
T
A
= +70
°
C
C
C
(
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SY1905DL-T1-E3 制造商:Vishay Intertechnologies 功能描述:
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