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參數(shù)資料
| 型號： | BTB12-200BW |
| 元件分類： | TVS-瞬態(tài)抑制二極管 |
| 英文描述： | Transient Voltage Suppressor Diodes |
| 中文描述： | 可控硅| 200伏五（DRM）的| 12A條口（T）的有效值|至220 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 109K |
| 代理商： | BTB12-200BW |
1/7
MAIN FEATURES:
BTA/BTB12 and T12 Series
SNUBBERLESS
, LOGIC LEVEL & STANDARD
12A TRIAC
S
September 2002 - Ed: 6A
DESCRIPTION
Available either in through-hole or surface-mount
packages, the BTA/BTB12 and T12 triac series is
suitable for general purpose AC switching. They
can be used as an ON/OFF function in
applications such as static relays, heating
regulation, induction motor starting circuits... or for
phase control operation in light dimmers, motor
speed controllers,...
The snubberless versions (BTA/BTB...W and T12
series) are specially recommended for use on
inductive loads, thanks to their high commutation
performances. Logic level versions are designed
to interface directly with low power drivers such as
microcontrollers. By using an internal ceramic
pad, the BTA series provides voltage insulated tab
(rated at 2500V RMS) complying with UL
standards (File ref.: E81734)
Symbol
Value
Unit
I
T(RMS)
12
A
V
DRM
/V
RRM
600 and 800
V
I
GT (Q
1
)
5 to 50
mA
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
I
T(RMS)
RMS on-state current (full sine wave)
D
2
PAK/TO-220AB
Tc = 105°C
12
A
TO-220AB Ins.
Tc = 90°C
I
TSM
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
F = 50 Hz
t = 20 ms
120
A
F = 60 Hz
t = 16.7 ms
126
I
2
t
I
2
t Value for fusing
tp = 10 ms
78
A
2
s
dI/dt
Critical rate of rise of on-state current
I
G
= 2 x I
GT
, tr
≤
100 ns
F = 120 Hz
Tj = 125°C
50
A/μs
V
DSM
/V
RSM
Non repetitive surge peak off-state
voltage
tp = 10 ms
Tj = 25°C
V
DRM
/V
RRM
+ 100
V
I
GM
Peak gate current
tp = 20 μs
Tj = 125°C
4
A
P
G(AV)
Average gate power dissipation
Tj = 125°C
1
W
T
stg
T
j
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
°C
G
A2
A1
G
A2
A2
A1
A2
A2
A1
G
D
2
PAK
(T12-G)
G
A2
A1
TO-220AB Insulated
(BTA12)
TO-220AB
(BTB12)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BTB12-600W | Transient Voltage Suppressor Diodes |
| BTB12-700AW | Transient Voltage Suppressor Diodes |
| BTB12-800AW | Transient Voltage Suppressor Diodes |
| BTB12-200CW | Transient Voltage Suppressor Diodes |
| BTB12-400AW | Transient Voltage Suppressor Diodes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BTB12200C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRIAC|200V V(DRM)|12A I(T)RMS|TO-220 |
| BTB12-200C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRIAC|200V V(DRM)|12A I(T)RMS|TO-220 |
| BTB12-200CW | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRIAC|200V V(DRM)|12A I(T)RMS|TO-220 |
| BTB1236A3 | 制造商:CYSTEKEC 制造商全稱:Cystech Electonics Corp. 功能描述:Silicon PNP Epitaxial Planar Transistor |
| BTB1236AE3 | 制造商:CYSTEKEC 制造商全稱:Cystech Electonics Corp. 功能描述:Silicon PNP Epitaxial Planar Transistor |
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