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參數(shù)資料
| 型號(hào)： | SUP75N08 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 75-V (D-S), 175C MOSFET |
| 中文描述： | N通道75 - V（下局副局長(zhǎng)），175C MOSFET的 |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大小： | 90K |
| 代理商： | SUP75N08 |
SUP/SUB75N08-09L
Vishay Siliconix
New Product
www.vishay.com FaxBack 408-970-5600
2-2
Document Number: 70870
S-60951—Rev. A, 26-Apr-99
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
DS
= 0 V, I
D
= 250 A
75
V
Gate-Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
1
3
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
Zero Gate Voltage Drain Current
V l
D i C
I
DSS
V
DS
= 60 V, V
GS
= 0 V
1
A
V
DS
= 60 V, V
GS
= 0 V, T
J
= 125 C
50
V
DS
= 60 V, V
GS
= 0 V, T
J
= 175 C
250
On-State Drain Current
a
I
D(on)
V
DS
5 V, V
GS
= 10 V
120
A
D i S
Drain-Source On-State Resistance
O S
a
V
GS
= 10 V, I
D
= 30 A
0.0076
0.009
r
DS(on)
V
GS
= 4.5 V, I
D
=
20 A
0.011
V
GS
= 10 V, I
D
= 30 A, T
J
= 125 C
0.016
V
GS
= 10 V, I
D
= 30 A, T
J
= 175 C
0.021
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 30 A
30
S
Dynamic
b
Input Capacitance
C
iss
5600
Output Capacitance
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
820
pF
Reverse Transfer Capacitance
C
rss
275
Total Gate Charge
c
Q
g
V
DS
= 30 V V
V
GS
= 10 V, I
D
= 75 A
10 V I
121
150
Gate-Source Charge
c
Q
gs
20
nC
Gate-Drain Charge
c
Q
gd
25
Turn-On Delay Time
c
t
d(on)
V
= 30 ,
= 0 47
75 A V
75 A, V
GEN
= 10 V, R
G
= 2.5
11
20
Rise Time
c
t
r
I
D
10 V R
2 5
10
20
ns
Turn-Off Delay Time
c
t
d(off)
107
200
Fall Time
c
t
f
22
40
Source-Drain Diode Ratings and Characteristics (T
C
= 25 C)
b
Continuous Current
I
S
75
A
Pulsed Current
I
SM
240
Forward Voltage
a
V
SD
I
F
= 75 A, V
GS
= 0 V
1.0
1.3
V
Reverse Recovery Time
t
rr
I
F
= 75 A, di/dt = 100 A/ s
75 A di/dt
80
120
ns
Peak Reverse Recovery Current
I
RM(REC)
4
9
A
Reverse Recovery Charge
Q
rr
0.32
0.54
C
Notes
a.
b.
c.
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
Independent of operating temperature.
300 s, duty cycle
2%.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SUP75N08-09L | 功能描述:MOSFET 75V 75A 250W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SUP75N08-09L-E3 | 功能描述:MOSFET 75V 75A 250W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SUP75N08-09L-T1-E3 | 制造商:Vishay Intertechnologies 功能描述:N CHANNEL MOSFET, 75V, 75A, Transistor Polarity:N Channel, Continuous Drain Curr |
| SUP75N08-10 | 功能描述:MOSFET 75V 75A 187W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SUP75N08-10 | 制造商:Vishay Siliconix 功能描述:MOSFET N TO-220AB |
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