參數(shù)資料
型號: SUP75N06-08
英文描述: N-Channel Enhancement-Mode Transistors
中文描述: N溝道增強模式晶體管
文件頁數(shù): 4/5頁
文件大?。?/td> 90K
代理商: SUP75N06-08
SUP/SUB75N08-09L
Vishay Siliconix
New Product
www.vishay.com FaxBack 408-970-5600
2-4
Document Number: 70870
S-60951—Rev. A, 26-Apr-99
0
0.5
1.0
1.5
2.0
2.5
–50
–25
0
25
50
75
100
125
150
175
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
T
J
– Junction Temperature ( C)
V
SD
– Source-to-Drain Voltage (V)
I
S
100
10
0.1
0.4
0.6
0.8
1.0
1.2
V
GS
= 10 V
I
D
T
J
= 25 C
T
J
= 150 C
1
(
r
D
)
0.2
60
70
80
90
100
–50
–25
0
25
50
75
100
125
150
175
Drain-Source Breakdown Voltage vs.
Junction Temperature
T
J
– Junction Temperature ( C)
Avalanche Current vs. Time
t
in
(Sec)
300
10
0.0001
0.001
0.1
1
1
100
(
I
D
0.01
I
AV
(A) @ T
J
= 150 C
I
AV
(A) @ T
J
= 25 C
(
V
(
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SUP75N06-08 制造商:Vishay Siliconix 功能描述:MOSFET N TO-220AB
SUP75N06-08-E3 功能描述:MOSFET 60V 75A 250W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SUP75N06-12L 功能描述:MOSFET 60V 75A 142W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SUP75N06-12L-E3 功能描述:MOSFET 60V 75A 142W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SUP75N06-12L-T1-E3 制造商:Vishay Intertechnologies 功能描述:N CHANNEL MOSFET, 60V, 75A, Transistor Polarity:N Channel, Continuous Drain Curr