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參數(shù)資料
| 型號(hào)： | SUP70N03-09P |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 30-V (D-S), 175C, MOSFET PWM Optimized |
| 中文描述： | N溝道30 V的（副），175葷，MOSFET的脈寬調(diào)制優(yōu)化 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大小： | 73K |
| 代理商： | SUP70N03-09P |
SUP/SUB70N03-09P
Vishay Siliconix
www.vishay.com FaxBack 408-970-5600
2-2
Document Number: 70821
S-59917—Rev. A, 28-Sep-98
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 A
30
V
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
DS
= 250 A
1
2
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
Zero Gate Voltage Drain Current
V l
D i C
I
DSS
V
DS
= 24 V, V
GS
= 0 V
1
A
V
DS
= 24 V, V
GS
= 0 V, T
J
= 125 C
50
V
DS
= 24 V, V
GS
= 0 V, T
J
= 175 C
150
On-State Drain Current
a
I
D(on)
V
DS
= 5 V, V
GS
= 10 V
70
A
D i S
Drain-Source On-State Resistance
O S
a
V
GS
= 10 V, I
D
= 30 A
0.007
0.009
r
DS(on)
V
GS
= 10 V, I
D
= 30 A, T
J
= 125 C
0.0135
V
GS
= 10 V, I
D
= 30 A, T
J
= 175 C
0.017
V
GS
= 4.5 V, I
D
= 20 A
0.011
0.015
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 30 A
30
60
S
Dynamic
b
Input Capacitance
C
iss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
0 V V
25 V f
2700
Output Capacitance
C
oss
680
pF
Reversen Transfer Capacitance
C
rss
360
Total Gate Charge
c
Q
g
V
DS
= 15 V V
V
GS
= 10 V, I
D
= 70 A
10 V I
45
70
Gate-Source Charge
c
Q
gs
8.5
nC
Gate-Drain Charge
c
Q
gd
11
Turn-On Delay Time
c
t
d(on)
13
20
Rise Time
c
t
r
V
= 15 V, R
= 0.21
DD
70 A, V
GEN
= 10 V, R
G
= 2.5
7
15
ns
Turn-Off Delay Time
c
t
d(off)
L
I
D
35
60
Fall Time
c
t
f
12
20
Source-Drain Diode Ratings and Characteristics (T
C
= 25 C)
b
Continuous Current
I
S
70
A
Pulsed Current
I
SM
180
Forward Voltage
a
V
SD
I
F
= 70 A, V
GS
= 0 V
1.2
1.5
V
Reverse Recovery Time
t
rr
I
F
= 70 A, di/dt = 100 A/ s
35
70
ns
Notes:
a.
b.
c.
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
Independent of operating temperature.
300 s, duty cycle
2%.
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| SUP70N03-09P-E3 | 功能描述:MOSFET 30V 70A 93W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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| SUP70N04-10-E3 | 功能描述:MOSFET 40V 70A 120W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SUP70N06-14 | 功能描述:MOSFET 60V 70A 142W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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