參數(shù)資料
型號(hào): SUP40N10-35
廠商: Vishay Intertechnology,Inc.
英文描述: N-Channel 105-V (D-S) 175C MOSFET
中文描述: N溝道105 -五(副)175葷MOSFET的
文件頁(yè)數(shù): 1/6頁(yè)
文件大?。?/td> 107K
代理商: SUP40N10-35
FEATURES
TrenchFET Power MOSFETS
175 C Junction Temperature
APPLICATIONS
Automotive
Motor Drives
12-V Systems
Note Book PC adaptors
SUP40N10-35
Vishay Siliconix
New Product
Document Number: 72797
S-40445—Rev. A, 15-Mar-04
www.vishay.com
1
N-Channel 105-V (D-S) 175 C MOSFET
PRODUCT SUMMARY
V
(BR)DSS
(V)
r
DS(on)
( )
0.035 @ V
GS
= 10 V
0.038 @ V
GS
= 6 V
I
D
(A)
37.5
105
36.0
D
G
S
N-Channel MOSFET
TO-220AB
Top View
G D S
Ordering Information: SUP40N10-35—E3
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
105
Gate-Source Voltage
V
GS
20
V
Continuous Drain Current
(T
J
= 175 C)
T
C
= 25 C
T
C
= 125 C
I
D
37.5
21.5
A
Pulsed Drain Current
I
DM
I
AR
E
AR
75
Avalanche Current
Repetitive Avalanche Energy
a
35
L = 0.1 mH
61
107
b
mJ
Maximum Power Dissipation
a
T
C
= 25 C
T
A
= 25 C
c
P
D
W
3.75
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 175
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
Unit
Junction-to-Ambient
t A bi
PCB Mount
c
R
thJA
40
Free Air
62.5
C/W
Junction-to-Case (Drain)
R
thJC
1.4
Notes
a.
b.
c.
Duty cycle
See SOA curve for voltage derating.
When mounted on 1” square PCB (FR-4 material).
1%.
相關(guān)PDF資料
PDF描述
SUP40N10-35-E3 N-Channel 105-V (D-S) 175C MOSFET
SUP45N03-13L N-Channel 30-V (D-S), 175C MOSFET
SUP57N20-33 N-Channel 200-V (D-S) 175C MOSFET
SUP70N03-09BP N-Channel 30-V (D-S), 175C, MOSFET PWM Optimized
SUP75N05-06 N-Channel 50-V (D-S), 175C MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SUP40N10-35-E3 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 105-V (D-S) 175C MOSFET
SUP40N25-60 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 250-V (D-S) 175 Celsius MOSFET
SUP40N25-60_07 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 250-V (D-S) 175 Celsius MOSFET
SUP40N25-60-E3 功能描述:MOSFET 250V 40A 300W 60mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SUP40P10-43-GE3 功能描述:MOSFET P-CH 100V 36A TO220AB RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:TrenchFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時(shí)的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件