參數(shù)資料
型號: SUP40N06-25L
廠商: Vishay Intertechnology,Inc.
英文描述: N-Channel 60-V (D-S), 175 Degrees Celcious MOSFET, Logic Level
中文描述: N溝道60五(副),175度,Celcious MOSFET的邏輯電平
文件頁數(shù): 2/4頁
文件大小: 62K
代理商: SUP40N06-25L
SUP/SUB40N06-25L
Vishay Siliconix
www.vishay.com FaxBack 408-970-5600
2-2
Document Number: 70288
S-57253—Rev. C, 24-Feb-98
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 A
60
V
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
DS
= 250 A
1.0
2.0
3.0
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
Zero Gate Voltage Drain Current
V l
D i C
I
DSS
V
DS
= 60 V, V
GS
= 0 V
1
A
V
DS
= 60 V, V
GS
= 0 V, T
J
= 125 C
50
V
DS
= 60 V, V
GS
= 0 V, T
J
= 175 C
150
On-State Drain Current
a
I
D(on)
V
DS
= 5 V, V
GS
= 10 V
40
A
D i S
Drain-Source On-State Resistance
O S
a
V
GS
= 10 V, I
D
= 20 A
0.022
r
DS(on)
V
GS
= 10 V, I
D
= 20 A, T
J
= 125 C
0.043
V
GS
= 10 V, I
D
= 20 A, T
J
= 175 C
0.053
V
GS
= 4.5 V, I
D
= 20 A
0.025
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 20 A
S
Dynamic
b
Input Capacitance
C
iss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
0 V V
25 V f
1800
Output Capacitance
C
oss
350
pF
Reversen Transfer Capacitance
C
rss
100
Total Gate Charge
c
Q
g
V
DS
= 30 V V
V
GS
= 10 V, I
D
= 40 A
10 V I
40
60
Gate-Source Charge
c
Q
gs
9
nC
Gate-Drain Charge
c
Q
gd
10
Turn-On Delay Time
c
t
d(on)
10
20
Rise Time
c
t
r
V
= 30 V, R
= 0.8
DD
40 A, V
GEN
= 10 V, R
G
= 2.5
9
20
ns
Turn-Off Delay Time
c
t
d(off)
L
I
D
28
50
Fall Time
c
t
f
7
15
Source-Drain Diode Ratings and Characteristics (T
C
= 25 C)
b
Continuous Current
I
s
40
A
Pulsed Current
I
SM
100
Forward Voltage
a
V
SD
I
F
= 40 A, V
GS
= 0 V
1.0
1.5
V
Reverse Recovery Time
t
rr
I
F
= 40 A, di/dt = 100 A/ s
40 A di/d
48
100
ns
Peak Reverse Recovery Current
I
RM(REC)
6
A
Reverse Recovery Charge
Q
rr
0.15
C
Notes:
a.
b.
c.
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
Independent of operating temperature.
300 s, duty cycle
2%.
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