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參數(shù)資料
| 型號： | SUM70N04-07L |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 40-V (D-S) 175ºC MOSFET |
| 中文描述： | N通道40V（D-S）175℃MOSFET |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 44K |
| 代理商： | SUM70N04-07L |
SUM70N04-07L
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 72345
S-31617—Rev. A, 11-Aug-03
SPECIFICATIONS (T
J
=25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
DS
= 0 V, I
D
= 250 A
40
V
Gate-Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
1
3
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
V
DS
= 32 V, V
GS
= 0 V
1
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 32 V, V
GS
= 0 V, T
J
= 125 C
50
A
V
DS
= 32 V, V
GS
= 0 V, T
J
= 175 C
250
On-State Drain Current
a
I
D(on)
V
DS
5 V, V
GS
= 10 V
100
A
V
GS
= 10 V, I
D
= 30 A
0.006
0.0074
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 4.5 V, I
D
=
10 A
0.0085
0.011
V
GS
= 10 V, I
D
= 30 A, T
J
= 125 C
0.012
V
GS
= 10 V, I
D
= 30 A, T
J
= 175 C
0.015
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 30 A
20
S
Dynamic
b
Input Capacitance
C
iss
2800
Output Capacitance
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
320
pF
Reverse Transfer Capacitance
C
rss
190
Total Gate Charge
c
Q
g
50
75
Gate-Source Charge
c
Q
gs
V
= 20 V,
V
= 10 V, I
= 50 A
DS
GS
10
nC
Gate-Drain Charge
c
Q
gd
D
10
Gate Resistance
R
G
2.0
Turn-On Delay Time
c
t
d(on)
11
20
Rise Time
c
t
r
V
= 20 V, R
= 0.4
50 A, V
GEN
= 10 V, R
G
= 2.5
20
30
ns
Turn-Off Delay Time
c
t
d(off)
I
D
40
60
Fall Time
c
t
f
15
25
Source-Drain Diode Ratings and Characteristics (T
C
= 25 C)
b
Continuous Current
I
S
66
A
Pulsed Current
I
SM
100
Forward Voltage
a
V
SD
I
F
= 50 A, V
GS
= 0 V
1.0
1.5
V
Reverse Recovery Time
t
rr
30
50
ns
Peak Reverse Recovery Current
I
RM(REC)
I
= 50 A, di/dt = 100 A/ s
F
1.6
2.4
A
Reverse Recovery Charge
Q
rr
0.024
0.06
C
Notes
a.
b.
c.
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
Independent of operating temperature.
300 s, duty cycle
2%.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SUM70N04-07L_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 40-V (D-S) 175 Celsius MOSFET |
| SUM70N04-07L-E3 | 功能描述:MOSFET 40V 70A 100W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SUM70N06-09L-E3 | 制造商:Vishay Semiconductors 功能描述: |
| SUM70N06-11 | 制造商:Vishay Siliconix 功能描述:MOSFET N D2-PAK |
| SUM70UF | 制造商:SSDI 制造商全稱:Solid States Devices, Inc 功能描述:400 mA 6,000 thru 9,000 VOLTS 60 ns ULTRA FAST RECOVERY RECTIFIER |
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