參數(shù)資料
型號: SUM60P05-11LT
廠商: Vishay Intertechnology,Inc.
英文描述: P-Channel 55-V (D-S) MOSFET with Sensing Diode
中文描述: P通道55 - V的檢測二極管(副)MOSFET的
文件頁數(shù): 4/5頁
文件大?。?/td> 55K
代理商: SUM60P05-11LT
SUM60P05-11LT
Vishay Siliconix
www.vishay.com
4
Document Number: 71748
S-05060
Rev. A, 12-Nov-01
0.0
0.4
0.8
1.2
1.6
2.0
50
25
0
25
50
75
100
125
150
175
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
T
J
Junction Temperature ( C)
V
SD
Source-to-Drain Voltage (V)
I
S
100
10
1
0.2
0.6
0.4
1.0
1.2
V
GS
= 10 V
I
D
T
J
= 25 C
(
r
D
)
0
0.8
T
J
= 150 C
Drain Source Breakdown vs.
Junction Temperature
Avalanche Current vs. Time
50
55
60
65
70
50
25
0
25
50
75
100
125
150
175
T
J
Junction Temperature ( C)
t
in
(Sec)
1000
10
0.00001
0.001
0.1
1
100
(
I
D
0.01
(
V
(
0.0001
I
AV
(A) @ T
A
= 25 C
I
AV
(A) @ T
A
= 150 C
1
0.1
I
D
= 250 A
0.0
0.2
0.4
0.6
0.8
1.0
0
25
50
75
100
125
150
Sense Diode Forward Voltage vs. Temperature
T
J
Junction Temperature ( C)
(
V
F
I
D
= 250 A
I
D
= 125 A
Sense Diode Forward Voltage
V
F
(V)
0.01
0.0001
0.000001
0.2
0.6
0.4
1.0
T
J
= 25 C
0
0.8
T
J
= 150 C
(
I
F
0.00001
0.001
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