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| 型號： | SUM60N08-07T |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | MOSFET SPECIFICATIONS (TJ = 25 C UNLESS OTHERWISE NOTED) |
| 中文描述： | MOSFET的規(guī)格（勺\u003d 25度，除非另有說明） |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 53K |
| 代理商： | SUM60N08-07T |
FEATURES
TrenchFET Power MOSFET Plus
Temperature Sensing Diode
New Low Thermal Resistance Package
APPLICATIONS
Automotive
Industrial
SUM60N08-07T
Vishay Siliconix
New Product
Document Number: 71833
S-20174—Rev. A, 18-Mar-02
www.vishay.com
1
N-Channel 75-V (D-S) MOSFET with Sensing Diode
PRODUCT SUMMARY
V
(BR)DSS
(V)
r
DS(on)
( )
I
D
(A)
60
a
75
0.007 @ V
GS
= 10 V
D
2
PAK-5L
S
G
D
T
1
5
1
3
2
4
T
2
T
1
T
2
D
2
D
1
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
V
GS
75
Gate-Source Voltage
20
V
T
C
= 25 C
60
a
Continuous Drain Current
(T
J
= 175 C)
d
T
C
= 100 C
I
D
60
a
Pulsed Drain Current
I
DM
I
S
I
AR
E
AR
240
A
Continous Diode Current (Diode Conduction)
d
60
a
Avalanche Current
60
a
Repetitive Avalanche Energy
b
L = 0.1 mH
180
mJ
T
C
= 25 C
T
A
= 25 C
300
c
Maximum Power Dissipation
a
P
D
3.75
d
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
–55 to 175
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
Unit
Junction-to-Ambient
d
PCB Mount
d
R
thJA
40
Junction-to-Case
R
thJC
0.5
C/W
Notes
a.
b.
c.
d.
Package limited.
Duty cycle
See SOA curve for voltage derating.
When mounted on 1” square PCB (FR-4 material).
1%.
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| SUM60N10-17 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 100-V (D-S) 175C MOSFET |
| SUM60N10-17_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 100-V (D-S) 175 ∑C MOSFET |
| SUM60N10-17-E3 | 功能描述:MOSFET 100V 60A 150W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SUM60N10-17-E3 | 制造商:Vishay Siliconix 功能描述:MOSFET |
| SUM60ND412LT | 制造商:SILICONIX 功能描述:* |
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