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參數(shù)資料
| 型號： | SUM50N03 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | SPICE Device Model SUM50N03-13LC |
| 中文描述： | 器件的SPICE模型SUM50N03 - 13LC |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 184K |
| 代理商： | SUM50N03 |
SPICE Device Model SUM50N03-13LC
Vishay Siliconix
www.vishay.com
2
Document Number: 71918
09-Jun-04
SPECIFICATIONS (T
J
= 25
°
C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
Simulated
Data
Measured
Data
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
μ
A
1.8
V
On-State Drain Current
a
I
D(on)
V
DS
= 5 V, V
GS
= 10 V
434
A
V
GS
= 10 V, I
D
= 25 A
0.010
0.010
V
GS
= 10 V, I
D
= 25 A, T
J
= 125
°
C
0.016
0.016
V
GS
= 10 V, I
D
= 25 A, T
J
= 175
°
C
0.018
0.018
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 4.5 V, I
D
= 24 A
0.014
0.014
Forward Voltage
a
Dynamic
b
V
SD
I
S
= 50 A, V
GS
= 0 V
0.90
1.3
V
Input Capacitance
C
iss
2009
1960
Output Capacitance
C
oss
367
380
Reverse Transfer Capacitance
C
rss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
111
180
pF
Total Gate Charge
c
Q
g
34
35
Gate-Source Charge
c
Q
gs
7.6
7.6
Gate-Drain Charge
c
Q
gd
V
DS
= 15 V, V
GS
= 10 V, I
D
= 50 A
5.6
5.6
nC
Turn-On Delay Time
c
t
d(on)
23
10
Rise Time
c
t
r
19
93
Turn-Off Delay Time
c
t
d(off)
8
30
Fall Time
c
t
f
V
DD
= 15 V, R
L
= 0.30
I
D
50 A, V
GEN
= 10 V, R
G
= 2.5
10
10
Reverse Recovery Time
t
rr
I
F
= 50,A di/dt = 100 A/
μ
s
29
35
ns
Notes
a.
b.
c. Independent of operating temperature.
Pulse test; pulse width
≤
300
μ
s, duty cycle
≤
2%.
Guaranteed by design, not subject to production testing.
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| SUM50N03-13LC | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Current-Sensing Power MOSFETs |
| SUM50N03-13LC-E3 | 功能描述:MOSFET 30V 50A 83W w/Sense Terminal RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SUM50N06-16L | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 60-V (D-S), 175C MOSFET, Logic Level |
| SUM50N06-16L-E3 | 功能描述:MOSFET 60V 50A 93W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SUM50UF | 制造商:SSDI 制造商全稱:Solid States Devices, Inc 功能描述:0.4 AMPS 2000 - 5000 VOLTS 60 nsec HIGH VOLTAGE ULTRA FAST RECTIFIER |
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