參數(shù)資料
型號: SUM34N10-35
廠商: Vishay Intertechnology,Inc.
英文描述: N-Channel 100-V (D-S) 175C MOSFET
中文描述: N溝道100 -五(副)175葷MOSFET的
文件頁數(shù): 2/5頁
文件大?。?/td> 41K
代理商: SUM34N10-35
SUM34N10-35
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 72160
S-03415—Rev. A, 03-Mar-03
SPECIFICATIONS (T
J
=25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
DS
= 0 V, I
D
= 250 A
100
V
Gate-Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
2
4
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
V
DS
= 80 V, V
GS
= 0 V
1
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 80 V, V
GS
= 0 V, T
J
= 125 C
50
A
V
DS
= 80 V, V
GS
= 0 V, T
J
= 175 C
250
On-State Drain Current
a
I
D(on)
V
DS
5 V, V
GS
= 10 V
60
A
V
GS
= 10 V, I
D
= 20 A
0.028
0.035
Drain Source On State Resistance
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 6 V, I
D
= 15 A
0.032
0.040
V
GS
= 10 V, I
D
= 20 A, T
J
= 125 C
0.067
V
GS
= 10 V, I
D
= 20 A, T
J
= 175 C
0.087
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 30 A
10
S
Dynamic
b
Input Capacitance
C
iss
2000
Output Capacitance
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
210
pF
Reverse Transfer Capacitance
C
rss
77
Total Gate Charge
c
Q
g
35
55
Gate-Source Charge
c
Q
gs
V
= 50 V,
V
= 10 V, I
= 30 A
DS
GS
10
nC
Gate-Drain Charge
c
Q
gd
D
10
Gate Resistance
R
G
4.5
Turn-On Delay Time
c
t
d(on)
11
20
Rise Time
c
t
r
V
= 50 V, R
= 1.67
30 A, V
GEN
= 10 V, R
G
= 2.5
65
100
ns
Turn-Off Delay Time
c
t
d(off)
I
D
30
45
Fall Time
c
t
f
55
85
Source-Drain Diode Ratings and Characteristics (T
C
= 25 C)
b
Continuous Current
I
S
34
A
Pulsed Current
I
SM
60
Forward Voltage
a
V
SD
I
F
= 20 A, V
GS
= 0 V
1.0
1.5
V
Reverse Recovery Time
t
rr
125
200
ns
Peak Reverse Recovery Current
I
RM(REC)
I
= 60 A, di/dt = 100 A/ s
F
4.5
7
A
Reverse Recovery Charge
Q
rr
0.28
0.7
C
Notes
a.
b.
c.
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
Independent of operating temperature.
300 s, duty cycle
2%.
相關(guān)PDF資料
PDF描述
SUM40N02-12P N-Channel 20-V (D-S) 175C MOSFET
SUM40N02 N-Channel 20-V (D-S), 175∑C MOSFET
SUM40N02-09P N-Channel 20-V (D-S), 175∑C MOSFET
SUM40N03-30L-E3 N-Channel 30-V (D-S) 175C MOSFET
SUM40N03-30L N-Channel 30-V (D-S) 175C MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SUM35F 制造商:SSDI 制造商全稱:Solid States Devices, Inc 功能描述:0.5 AMPS 2000 - 5000 VOLTS 180 nsec HIGH VOLTAGE RECTIFIER
SUM35UF 制造商:SSDI 制造商全稱:Solid States Devices, Inc 功能描述:0.4 AMPS 2000 - 5000 VOLTS 60 nsec HIGH VOLTAGE ULTRA FAST RECTIFIER
SUM35UFSMS 制造商:SSDI 制造商全稱:Solid States Devices, Inc 功能描述:0.4 AMPS 2000 - 5000 VOLTS 60 nsec HIGH VOLTAGE ULTRA FAST RECTIFIER
SUM36N20-54P 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 200-V (D-S) MOSFET
SUM36N20-54P-E3 功能描述:MOSFET 200V 36A 166W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube