參數(shù)資料
型號： SUM27N20-78
廠商： Vishay Intertechnology,Inc.
英文描述： N-Channel 200-V (D-S) 175C MOSFET
中文描述： N溝道200 -五（副）175葷MOSFET的
文件頁數(shù)： 2/5頁
文件大?。?/td> 52K
代理商： SUM27N20-78
SUM27N20-78
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 72108
S-03005
—
Rev. A, 27-Jan-03
SPECIFICATIONS (T
J
=25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
DS
= 0 V, I
D
= 250 A
200
Gate-Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
2
4
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
V
DS
= 160 V, V
GS
= 0 V
1
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 160 V, V
GS
= 0 V, T
J
= 125 C
50
A
V
DS
= 160 V, V
GS
= 0 V, T
J
= 175 C
250
On-State Drain Current
a
I
D(on)
V
DS
5 V, V
GS
= 10 V
60
A
V
GS
= 10 V, I
D
= 20 A
0.064
0.078
Drain-Source On-State Resistance
a
V
GS
= 10 V, I
D
= 20 A, T
J
= 125 C
0.160
r
DS(on)
V
GS
= 10 V, I
D
= 20 A, T
J
= 175 C
0.205
Drain-Source on State Resistance
V
GS
= 6 V, I
D
= 15 A
0.068
0.083
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 30 A
15
S
Dynamic
b
Input Capacitance
C
iss
2150
Output Capacitance
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
215
pF
Reverse Transfer Capacitance
C
rss
90
Total Gate Charge
c
Q
g
40
60
Gate-Source Charge
c
Q
gs
V
= 100 V,
V
= 10 V, I
= 20 A
DS
GS
11
nC
Gate-Drain Charge
c
Q
gd
D
14
Gate Resistance
R
G
2
Turn-On Delay Time
c
t
d(on)
15
25
Rise Time
c
t
r
V
= 100 V, R
= 5
20 A, V
GEN
= 10 V, R
G
= 2.5
35
55
Turn-Off Delay Time
c
t
d(off)
I
D
40
60
ns
Fall Time
c
t
f
30
45
Source-Drain Diode Ratings and Characteristics (T
C
= 25 C)
b
Continuous Current
I
S
27
Pulsed Current
I
SM
60
A
Forward Voltage
a
V
SD
I
F
= 20 A, V
GS
= 0 V
1.0
1.5
V
Reverse Recovery Time
t
rr
115
170
ns
Peak Reverse Recovery Current
I
RM(REC)
I
= 50 A, di/dt = 100 A/ s
F
7.5
12
A
Reverse Recovery Charge
Q
rr
0.43
1.02
C
Notes
a.
b.
c.
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
Independent of operating temperature.
300 s, duty cycle
2%.
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