參數(shù)資料
型號(hào): SUM110N06-04L
廠商: Vishay Intertechnology,Inc.
英文描述: N-Channel 60-V (D-S) 200C MOSFET
中文描述: N通道60 - V(下局副局長(zhǎng))200C型MOSFET的
文件頁(yè)數(shù): 2/5頁(yè)
文件大小: 43K
代理商: SUM110N06-04L
SUM110N06-04L
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 71704
S-20417
Rev. B, 08-Apr-02
SPECIFICATIONS (T
J
=25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
DS
= 0 V, I
D
= 250 A
60
Gate-Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
1
3
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
V
DS
= 48 V, V
GS
= 0 V
1
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 48 V, V
GS
= 0 V, T
J
= 125 C
50
A
V
DS
= 48 V, V
GS
= 0 V, T
J
= 200 C
10
mA
On-State Drain Current
a
I
D(on)
V
DS
5 V, V
GS
= 10 V
120
A
V
GS
= 10 V, I
D
= 30 A
0.0028
0.0035
V
GS
= 4.5 V, I
D
=
20 A
0.004
0.005
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 10 V, I
D
= 30 A, T
J
= 125 C
0.0058
V
GS
= 10 V, I
D
= 30 A, T
J
= 200 C
0.0088
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 30 A
30
S
Dynamic
b
Input Capacitance
C
iss
7500
Output Capacitance
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
1050
pF
Reverse Transfer Capacitance
C
rss
700
Total Gate Charge
c
Q
g
150
220
Gate-Source Charge
c
Q
gs
V
= 30 V,
V
= 10 V, I
= 110 A
DS
GS
25
nC
Gate-Drain Charge
c
Q
gd
D
45
Turn-On Delay Time
c
t
d(on)
20
30
Rise Time
c
t
r
V
= 30 V, R
= 0.4
110 A, V
GEN
= 10 V, R
G
= 2.5
135
200
Turn-Off Delay Time
c
t
d(off)
I
D
80
120
ns
Fall Time
c
t
f
150
220
Source-Drain Diode Ratings and Characteristics (T
C
= 25 C)
b
Continuous Current
I
S
110
Pulsed Current
I
SM
440
A
Forward Voltage
a
V
SD
I
F
= 110 A, V
GS
= 0 V
1.1
1.4
V
Reverse Recovery Time
t
rr
75
120
ns
Peak Reverse Recovery Current
I
RM(REC)
I
F
= 110 A, di/dt = 100 A/ s
2.5
5
A
Reverse Recovery Charge
Q
rr
0.09
0.25
C
Notes
a.
b.
c.
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
Independent of operating temperature.
300 s, duty cycle
2%.
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