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參數(shù)資料
| 型號： | SUD50N02-06P |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel MOSFET, 20 V(D-S) , 175°C |
| 中文描述： | N溝道MOSFET，20V（D-S），175℃ |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 178K |
| 代理商： | SUD50N02-06P |
SPICE Device Model SUD50N02-06P
Vishay Siliconix
www.vishay.com
2
Document Number: 70104
08-Jun-04
SPECIFICATIONS (T
J
= 25
°
C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
Simulated
Data
Measured
Data
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
μ
A
1.4
V
On-State Drain Current
b
I
D(on)
V
DS
= 5 V, V
GS
= 10 V
964
A
V
GS
= 10 V, I
D
= 20 A
0.0041
0.0046
V
GS
= 10 V, I
D
= 20 A, T
J
= 125
°
C
0.0057
Drain-Source On-State Resistance
b
r
DS(on)
V
GS
= 4.5 V, I
D
= 20 A
0.0065
0.0073
Forward Voltage
b
Dynamic
a
V
SD
I
S
= 50 A, V
GS
= 0 V
0.91
1.2
V
Input Capacitance
C
iss
2418
2550
Output Capacitance
C
oss
816
900
Reverse Transfer Capacitance
C
rss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
348
415
pF
Total Gate Charge
c
Q
g
20
19
Gate-Source Charge
c
Q
gs
7.5
7.5
Gate-Drain Charge
c
Q
gd
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 50 A
6
6
nC
Turn-On Delay Time
c
t
d(on)
11
11
Rise Time
c
t
r
10
10
Turn-Off Delay Time
c
t
d(off)
9
24
Fall Time
c
t
f
V
DD
= 10 V, R
L
= 0.20
I
D
50 A, V
GEN
= 10 V, R
G
= 2.5
9
9
Source-Drain Reverse Recovery Time
t
rr
I
F
= 50 A, di/dt = 100 A/
μ
s
31
35
ns
Notes
a.
b.
c. Independent of operating temperature.
Guaranteed by design, not subject to production testing.
Pulse test; pulse width
≤
300
μ
s, duty cycle
≤
2%.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| SUD50N02-06P_06 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 20-V (D-S) 175Celsius MOSFET |
| SUD50N02-06P-E3 | 功能描述:MOSFET 20V 26A 65W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SUD50N02-06PT1 | 制造商:Vishay Siliconix 功能描述:26 A, 20 V, 0.006 OHM, N-CHANNEL, SI, POWER, MOSFET, TO-252 |
| SUD50N02-06P-T4 | 功能描述:MOSFET 20V 26A 65W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SUD50N02-06-T4 | 制造商:Vishay Angstrohm 功能描述:Trans MOSFET N-CH 20V 30A 3-Pin(2+Tab) DPAK T/R |
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