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參數(shù)資料
| 型號(hào)： | SUD40N06-25L |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 60-V (D-S), 175C MOSFET, Logic Level |
| 中文描述： | N溝道60五（副），175 ? MOSFET的邏輯電平 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 72K |
| 代理商： | SUD40N06-25L |
SUD40N06-25L
Vishay Siliconix
www.vishay.com FaxBack 408-970-5600
2-2
Document Number: 70264
S-57741—Rev. G, 31-Mar-98
Parameter
Symbol
Test Condition
Min
Typ
a
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 A
60
V
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
1.0
2.0
3.0
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
Zero Gate Voltage Drain Current
V l
D i C
I
DSS
V
DS
= 60 V, V
GS
= 0 V
1
A
V
DS
= 60 V, V
GS
= 0 V, T
J
= 125 C
50
V
DS
= 60 V, V
GS
= 0 V, T
J
= 175 C
150
On-State Drain Current
b
I
D(on)
V
DS
= 5 V, V
GS
= 10 V
20
A
D i S
Drain Source On State Resistance
Drain-Source On-State Resistance
O S
b
V
GS
= 10 V, I
D
= 20 A
0.022
r
DS(on)
V
GS
= 10 V, I
D
= 20 A, T
J
= 125 C
0.043
V
GS
= 10 V, I
D
= 20 A, T
J
= 175 C
0.053
V
GS
=
4.5
V, I
D
= 20 A
0.025
Forward Transconductance
b
g
fs
V
DS
= 15 V, I
D
= 20 A
S
Dynamic
Input Capacitance
C
iss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
0 V V
25 V f
1800
Output Capacitance
C
oss
350
pF
Reverse Transfer Capacitance
C
rss
100
Total Gate Charge
c
Q
g
V
DS
= 30 V, V
GS
= 10 V, I
D
= 40 A
30 V V
10 V I
40
60
Gate-Source Charge
c
Q
gs
9
nC
Gate-Drain Charge
c
Q
gd
10
Turn-On Delay Time
c
t
d(on)
V
= 30 ,
= 0 9
20 A V
20 A, V
GEN
= 10 V, R
G
= 2.5
10
20
Rise Time
c
t
r
I
D
10 V R
2 5
9
20
ns
Turn-Off Delay Time
c
t
d(off)
28
50
Fall Time
c
t
f
7
15
Source-Drain Diode Ratings and Characteristics (T
C
= 25 C)
Pulsed Current
I
SM
20
A
Diode Forward Voltage
V
SD
I
F
= 20 A, V
GS
= 0 V
1.0
1.5
V
Reverse Recovery Time
t
rr
I
F
= 20 A, di/dt = 100 A/ s
48
100
ns
Notes:
a.
b.
c.
For design aid only; not subject to production testing.
Pulse test; pulse width
300 s, duty cycle
Independent of operating temperature.
2%.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SUD40N06-25L | 制造商:Vishay Siliconix 功能描述:MOSFET N LOGIC D-PAK |
| SUD40N06-25L-E3 | 功能描述:MOSFET 60V 20A 75W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SUD40N06-25L-E3 | 制造商:Vishay Siliconix 功能描述:MOSFET |
| SUD40N08-16 | 功能描述:MOSFET 80V 40A 100W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SUD40N08-16 | 制造商:Vishay Siliconix 功能描述:MOSFET N D-PAK |
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